描述 Description

Infineon provides a huge IGBT portfolio addressing Soft Switching/Resonant and Hard Switching Topologies.

特性 Features

·30% lower E off compared to previous generation
·Short circuit withstand time – 10μs
·Designed for operation above 30kHz
·High ruggedness, temperature stable behaviour
·Pb-free lead plating; RoHS compliant
·Qualified according to JEDEC for target applications

簡介

SKB06N60屬于分立半導體產品的晶體管-UGBT、MOSFET-單。由制造生產的SKB06N60晶體管 - UGBT、MOSFET - 單單 IGBT（絕緣柵雙極晶體管）是一種具有三個端子的多層半導體器件，能夠處理大電流，具有快速開關特性。其特征參數包括類型、集射極擊穿電壓、集電極電流、脈沖集電極電流、VCE(ON)、開關能量和柵極電荷。