首頁>SIHLI630G-E3>規(guī)格書詳情
SIHLI630G-E3中文資料威世科技數(shù)據(jù)手冊PDF規(guī)格書
SIHLI630G-E3規(guī)格書詳情
VDS (V) 200
RDS(on) (Ω) VGS = 5.0 V 0.40
Qg (Max.) (nC) 40
Qgs (nC) 5.5
Qgd (nC) 24
Configuration Single
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.
FEATURES
? Isolated Package
? High Voltage Isolation = 2.5 kVRMS (t = 60 s;f = 60 Hz)
? Sink to Lead Creepage Distance = 4.8 mm
? Logic-Level Gate Drive
? RDS(on) Specified at VGS = 4 V and 5V
? Fast Switching
? Ease of paralleling
? Lead (Pb)-free Available
產(chǎn)品屬性
- 型號：
SIHLI630G-E3
- 制造商：
VISHAY
- 制造商全稱：
Vishay Siliconix
- 功能描述：
Power MOSFET
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
24+ |
NA/ |
10062 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
VISHAY |
21+ |
TO-220F |
10062 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
VISHAY/威世 |
2022+ |
TO-220F |
30000 |
進口原裝現(xiàn)貨供應,原裝 假一罰十 |
詢價 | ||
VISHAY/威世 |
23+ |
TO-220F |
11200 |
原廠授權一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO |
詢價 | ||
VISHAY/威世 |
20+ |
TO-220F |
7500 |
現(xiàn)貨很近!原廠很遠!只做原裝 |
詢價 | ||
VISHAY |
25+ |
TO-220F |
12645 |
詢價 | |||
V |
23+ |
TO-220F |
8560 |
受權代理!全新原裝現(xiàn)貨特價熱賣! |
詢價 | ||
V |
TO-220F |
22+ |
6000 |
十年配單,只做原裝 |
詢價 | ||
VISHAY/威世 |
23+ |
TO-220F |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
VB |
21+ |
TO-220F |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價 |
