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SIHFI730G-E3中文資料威世科技數(shù)據(jù)手冊(cè)PDF規(guī)格書

廠商型號(hào) |
SIHFI730G-E3 |
功能描述 | Power MOSFET |
文件大小 |
1.57493 Mbytes |
頁(yè)面數(shù)量 |
8 頁(yè) |
生產(chǎn)廠商 | VISHAY Vishay Siliconix |
中文名稱 | 威世科技 威世科技半導(dǎo)體 |
網(wǎng)址 | |
數(shù)據(jù)手冊(cè) | |
更新時(shí)間 | 2025-8-20 16:53:00 |
人工找貨 | SIHFI730G-E3價(jià)格和庫(kù)存,歡迎聯(lián)系客服免費(fèi)人工找貨 |
SIHFI730G-E3規(guī)格書詳情
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.
FEATURES
? Isolated Package
? High Voltage Isolation = 2.5 kVRMS (t = 60 s;f = 60 Hz)
? Sink to Lead Creepage Distance = 4.8 mm
? Dynamic dV/dt Rating
? Low Thermal Resistance
? Lead (Pb)-free Available
?
產(chǎn)品屬性
- 型號(hào):
SIHFI730G-E3
- 制造商:
VISHAY
- 制造商全稱:
Vishay Siliconix
- 功能描述:
Power MOSFET