首頁 >SIG25N60W>規(guī)格書列表
零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
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iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
ESeriesPowerMOSFETwithFastBodyDiodeandLowGateCharge | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
ESeriesPowerMOSFETwithFastBodyDiodeandLowGateCharge FEATURES ?Reducedfigure-of-merit(FOM):RonxQg ?FastbodydiodeMOSFETusingEseries technology ?Reducedtrr,Qrr,andIRRM ?IncreasedrobustnessduetolowQrr ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Avalancheenergyrated(UIS) ?Materialcateg | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
ESeriesPowerMOSFETwithFastBodyDiodeandLowGateCharge | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
ESeriesPowerMOSFETwithFastBodyDiodeandLowGateCharge | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
MOSFETsSiliconN-ChannelMOS Applications ?SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.105Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)High-speedswitchingpropertieswithlowercapacitance. (3)Enhancementmode:Vth=2.5to3.5V(VDS=10V,ID=1.2mA) | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC |
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