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SKW20N60

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode

FastS-IGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode ?75lowerEoffcomparedtopreviousgenerationcombinedwithlowconductionlosses ?Shortcircuitwithstandtime–10μs ?Designedfor: -Motorcontrols -Inverter ?NPT-Technologyfor600Vapplicatio

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SKW20N60

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SKW20N60HS

HighSpeedIGBTinNPT-technology

HighSpeedIGBTinNPT-technology ?30lowerEoffcomparedtopreviousgeneration ?Shortcircuitwithstandtime–10μs ?Designedforoperationabove30kHz ?NPT-Technologyfor600Vapplicationsoffers: -parallelswitchingcapability -moderateEoffincreasewithtemperature

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SKW20N60HS

HighSpeedIGBTinNPT-technology30lowerEoffcomparedtopreviousgeneration

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPA20N60CFD

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTO-220Fpackage ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?Reducedswitchingandconductionlosses ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Switchingapplication

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

SPA20N60CFD

CoolMOSPowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPA20N60CFD

CoolMOSTMPowerTransistorFeaturesNewrevolutionaryhighvoltagetechnologyExtremedv/dtrated

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPA20N60CFD

CoolMOSPowerTransistor

Features ?Newrevolutionaryhighvoltagetechnology ?Intrinsicfast-recoverybodydiode ?Extremelylowreverserecoverycharge ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?Periodicavalancherated ?Qualifiedforindustrialgradeapplicationsaccording

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPI20N60CFD

CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology

Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO220 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Intrinsicfast-recoverybodydiode ?Extremelowreverserecoverycharge ?Pb-freeleadplating;

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPI20N60CFD

iscN-ChannelMOSFETTransistor

?DESCRIPTION ?Ultralowgatecharge ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.22? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

供應商型號品牌批號封裝庫存備注價格
SUPER超致
2021
TO-220
20
全新原裝 正品現(xiàn)貨
詢價
JST
1500
代理優(yōu)勢渠道,有上都有,只有原裝,實單給接受價!
詢價
JST/日壓
2508+
/
309575
一級代理,原裝現(xiàn)貨
詢價
FUJI
專業(yè)模塊
MODULE
8513
模塊原裝主營-可開原型號增稅票
詢價
FUJI/富士電機
23+
MODULE
11200
原廠授權一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO
詢價
FUJI
24+
MODULE
2050
公司大量全新原裝 正品 隨時可以發(fā)貨
詢價
華昕
23+
SOT23-6
5000
原裝正品,假一罰十
詢價
SIG
25+23+
SOT23
29067
絕對原裝正品現(xiàn)貨,全新深圳原裝進口現(xiàn)貨
詢價
SIG
23+
SOT23
999999
原裝正品現(xiàn)貨量大可訂貨
詢價
SIG
19+
SOT23
20000
1700
詢價
更多SIG20N60P供應商 更新時間2025-7-26 16:00:00