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SIE800DF

N-Channel 30-V (D-S) MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?ExtremelyLowQgdforLowSwitchingLosses ?TrenchFET?PowerMOSFET ?UltraLowThermalResistanceUsingTopExposedPolarPAK?PackageforDouble-SidedCooling ?Leadframe-BasedNewEncapsulatedPackage -DieNotEx

SiE800DF

N-Channel 30 V (D-S) MOSFET;

SIE800DF-T1-E3

N-Channel 30 V (D-S) MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?ExtremelyLowQgdforLowSwitchingLosses ?TrenchFET?PowerMOSFET ?UltraLowThermalResistanceUsingTopExposedPolarPAK?PackageforDouble-SidedCooling ?Leadframe-BasedNewEncapsulatedPackage -DieNotEx

SIJ800DP

N-Channel40-V(D-S)MOSFET

SIJH800E

N-Channel80V(D-S)175?CMOSFET

FEATURES ?TrenchFET?GenIVpowerMOSFET ?Fullylead(Pb)-freedevice ?OptimizedQg,Qgd,andQgd/Qgsratioreduces switchingrelatedpowerloss ?50smallerfootprintthanD2PAK(TO-263) ?100RgandUIStested ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.v

SIM800

SIM800SeriesATCommandManual

SIM800

SIM800SeriesATCommandManual

GeneralNotes SIMComoffersthisinformationasaservicetoitscustomers,tosupportapplicationand engineeringeffortsthatusetheproductsdesignedbySIMCom.Theinformationprovidedisbased uponrequirementsspecificallyprovidedtoSIMCombythecustomers.SIMComhasnot undertakena

SIM800C

HardwareDesignV1.02

SIM800C

Hardware_Design_V1.02

SIM800Cwillbepoweredoffinthefollowingsituations： ?Normalpoweroffprocedure:poweroffSIM800CbythePWRKEYpin. ?Normalpoweroffprocedure:poweroffSIM800CbyATcommand“AT+CPOWD=1”. ?Abnormalpoweroff:over-voltageorunder-voltageautomaticpoweroff. ?Abnormalpoweroff:

SIM800F

Dual-band850/900/1800/1900MHz