訂購數(shù)量 | 價格 |
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1+ |
首頁>SI8402DB-T1-E1>芯片詳情
SI8402DB-T1-E1_VISHAY/威世科技_MOSFET 20V 6.8A匯萊威一部
- 詳細(xì)信息
- 規(guī)格書下載
產(chǎn)品屬性
- 類型
描述
- 型號:
SI8402DB-T1-E1
- 功能描述:
MOSFET 20V 6.8A
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商
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