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SI3456DV中文資料仙童半導體數(shù)據(jù)手冊PDF規(guī)格書
SI3456DV規(guī)格書詳情
General Description
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
特性 Features
? 5.1 A, 30 V. RDS(ON) = 45 m @ VGS = 10 V
RDS(ON) = 65 m @ VGS = 4.5 V
? High performance trench technology for extremely low RDS(ON)
? Low gate charge
? High power and current handling capability
產(chǎn)品屬性
- 型號:
SI3456DV
- 功能描述:
MOSFET 30V/20V NCh MOSFET
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導通):
0.014 Ohms
- 配置:
Single
- 安裝風格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
VISHAY/威世 |
24+ |
SOT23-6 |
880000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
VISHAY |
23+ |
SOT23-6 |
999999 |
原裝正品現(xiàn)貨量大可訂貨 |
詢價 | ||
SI |
22+ |
SOT23-6 |
3000 |
原裝正品,支持實單 |
詢價 | ||
FAIRCHILD |
25+ |
SOT23-6 |
4500 |
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售! |
詢價 | ||
SI3456DV |
3000 |
3000 |
詢價 | ||||
onsemi(安森美) |
24+ |
SOT-23-6 |
9908 |
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。 |
詢價 | ||
24+ |
3000 |
自己現(xiàn)貨 |
詢價 | ||||
FAIRCHILD |
17+ |
SOT23-6 |
6200 |
100%原裝正品現(xiàn)貨 |
詢價 | ||
VISHAY |
23+ |
SOT163 |
19567 |
詢價 | |||
VISHAY |
23+ |
SOT23-6 |
30000 |
原裝正品,假一罰十 |
詢價 |