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SFT2010

HIGHENERCYNPNTRANSISTOR

[SSDI] 2N5094AND2N5096 HIGHVOLTAGEPNPTRANSISTOR450-500VOLTS SFT2010,SFT2012,SFT2014 200AMPHIGHENERGYNPNTRANSISTORVCEO100,120,140VOLTS

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SFT2010

200AMP100-140VOLTSNPNTRANSISTOR

200AMP100–140VOLTSNPNTRANSISTOR Features: ?BV(CBO)=250Voltsminimum ?600WPowerDissipation ?ExcellentSOACurve ?Es/bof800mJ ?Gainofover5at200A ?HighRelConstructionincludingGoldEutecticDieMounting,AluminumWiring ?PlanarChipConstructionwithLowLeakage

SSDI

Solid States Devices, Inc

SFT2010

HighEnergyNPNTransistor

200AMP100–140VoltHighEnergyNPNTransistor Features: ?BVCBO=250VMIN ?600WattsPowerDissipation ?ExcellentSOACurve ?Es/bof800mJ ?Gainofover5at200A ?HighReliabilityConstruction ?PlanarChipConstructionwithLowLeakageandVeryFastSwitching ?TX,TXV,S-Leve

SSDI

Solid States Devices, Inc

SG2010

150mA,LowPower,LowDropout,LinearRegulators

GENERALDESCRIPTION TheSG2010low-power,low-dropout,CMOSlinearvoltageregulatoroperatesfrom2.5Vto5.5Vinputanddeliversupto150mA.Itistheperfectchoiceforlowvoltage,lowpowerapplications.Anultralowgroundcurrent(100μAat150mAoutput)makesthispartattractiveforbat

SGMICROSG Micro Corp

圣邦股份圣邦微電子(北京)股份有限公司

SID2010

3phiRoundInfraredLED

SankenSanken electric

三墾三墾電氣株式會(huì)社

SID2010C

3phiRoundInfraredLED

SankenSanken electric

三墾三墾電氣株式會(huì)社

SID2010C

3phiRoundInfraredLEDs

SankenSanken electric

三墾三墾電氣株式會(huì)社

SMPA2010

200TO2000MHzTO-8CASCADABLEAMPLIFIER

200TO2000MHzTO-8CASCADABLEAMPLIFIER ?HIGHOUTPUTPOWER:+25.5dBm(TYP.) ?HIGHTHIRDORDERIP3:+33dBm(TYP.) ?MODERATENOISEFIGURE:5.0dBm(TYP.) ?LOWVSWR:1.5:1(TYP.)

MACOMTyco Electronics

瑪科姆技術(shù)方案控股有限公司

SMPA2010

CascadableAmplifier200to2000MHz

Description ThePA2010poweramplifierisadiscretehybriddesign,whichusesthinfilmmanufacturingprocessesforaccurateperformanceandhighreliability. ThissinglestageGaAsFETfeedbackamplifierdesigndisplaysimpressiveperformancecharacteristicsoverabroadbandfrequencyrange.

MA-COM

M/A-COM Technology Solutions, Inc.

SMPA2010

CascadableAmplifier200to2000MHz

MA-COM

M/A-COM Technology Solutions, Inc.

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