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SFH4230

HighPowerInfraredEmitter(850nm)

Features ?Pointlightsourcewithhighefficiencyandsmall package ?die-size(emittingarea)1x1mm2 ?max.DC-current1A ?Lowthermalresistance(15K/W) ?Maximumofspectralemissionat850nm ?ESDsaveupto2kVacc.toJESD22-A114-B Applications ?Infrared

OSRAMOSRAM GmbH

艾邁斯歐司朗歐司朗光電半導(dǎo)體

SFH-4230

IR-Lumineszenzdiode(850nm)mithoherAusgangsleistung

OSRAMOSRAM GmbH

艾邁斯歐司朗歐司朗光電半導(dǎo)體

SI4230DY

DualN-Channel30-V(D-S)MOSFET

FEATURES ?Halogen-free ?TrenchFET?PowerMOSFET ?100RgandUISTested APPLICATIONS ?LowCurrentDC/DC ?NotebookPC -SystemPower

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

Si4230DY

DualN-Channel30-V(D-S)MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SWFC4230

SingleWindowSingleModeWidebandFiberCoupler

OPLINK

OPLINK Communications Inc.

SWFC4230A

MiniSingleWindowSingleModeFiberCoupler

OPLINK

OPLINK Communications Inc.

SWFC4230P

MiniSingleWindowSingleModeFiberCoupler

OPLINK

OPLINK Communications Inc.

TGF4230

1.2mmDiscreteHFET

DESCRIPTION TheTriquintTGF4230-EEUisasinglegate1.2mmDiscreteGaAsHeterostructureFieldEffectTransistor(HFET)designedforhigh-efficiencypowerapplicationsupto12-GHzinClassAandClassABoperation. Bond-padandbacksidemetalizationisgoldplatedforcompatibilitywith

TriQuint

TriQuint Semiconductor

TGF4230-EEU

1.2mmDiscreteHFET

DESCRIPTION TheTriquintTGF4230-EEUisasinglegate1.2mmDiscreteGaAsHeterostructureFieldEffectTransistor(HFET)designedforhigh-efficiencypowerapplicationsupto12-GHzinClassAandClassABoperation. Bond-padandbacksidemetalizationisgoldplatedforcompatibilitywith

TriQuint

TriQuint Semiconductor

TGF4230-SCC

DC-12GHzDiscreteHFET

Description TheTriQuintTGF4230-SCCisasinglegate1.2mmDiscreteGaAsHeterostructureFieldEffectTransistor(HFET)designedforhigh-efficiencypowerapplicationsupto12GHzinClassAandClassABoperation. Bond-padandbacksidemetalizationisgoldplatedforcompatibilitywithe

TriQuint

TriQuint Semiconductor

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