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HZ30B2

SiliconEpitaxialPlanarZenerDiodeforStabilizedPowerSupply

Features ?Lowleakage,lowzenerimpedanceandmaximumpowerdissipationof500mWareideallysuitedforstabilizedpowersupply,etc. ?Widespectrumfrom1.6Vthrough38Vofzenervoltageprovideflexibleapplication.

HitachiHitachi Semiconductor

日立日立公司

HZU30B2

SiliconEpitaxialPlanarZenerDiodesforStabilizer

Features ?UltrasmallResinPackage(URP)issuitableforsurfacemountdesign. ?Thesediodesaredeliveredtaped.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

PZU30B2

SingleZenerdiodesinaSOD323Fpackage

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

SZ30B2

SurfaceMountSiliconZenerDiodes

VZ:3.3-200Volts PD:1.5Watts Features ◇CompleteVoltageRange3.3to200Volts ◇Highpeakreversepowerdissipation ◇Highreliability ◇Lowleakagecurrent ◇Pb/RoHSFree

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

魯光電子深圳市魯光電子科技有限公司

SZ30B2

SURFACEMOUNTSILICONZENERDIODES

VZ:3.3-200Volts PD:1.5Watts FEATURES: *CompleteVoltageRange3.3to200Volts *Highpeakreversepowerdissipation *Highreliability *Lowleakagecurrent *Pb/RoHSFree

EIC

EIC discrete Semiconductors

SZ30B2

SURFACEMOUNTSILICONZENERDIODES

VZ:3.3-200Volts PD:1.5Watts FEATURES: *CompleteVoltageRange3.3to200Volts *Highpeakreversepowerdissipation *Highreliability *Lowleakagecurrent *Pb/RoHSFree

EIC

EIC discrete Semiconductors

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