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SD14

絲?。?a target="_blank" title="Marking" href="/14a/marking.html">14A；Package：SOD-323；TRANSIENT VOLTAGE SUPPRESSOR

Features Unidirection:450Wattspeakpulsepower perline(tp=8/20μs) ReplacementforMLV(0805) ProtectsonepowerorI/Oport Lowclampingvoltage Appliedtothetype3Vand36V 61000-4-2(ESD):Air30kV,Contact30kV

SD14

Schottky Diode;

分立

SD14

Surface Mount High Current Density Schottky Rectifiers 1.0 Amp 40V

SD1400

RF & MICROWAVE TRANSISTORS 860-900 MHz CLASS C, BASE STATIONS

RF&MICROWAVETRANSISTORS860-900MHzCLASSC,BASESTATIONS

SD1400-02

RF & MICROWAVE TRANSISTORS 860-900 MHz CLASS C, BASE STATIONS

RF&MICROWAVETRANSISTORS860-900MHzCLASSC,BASESTATIONS

SD1400-2

RF & MICROWAVE TRANSISTORS 860-900 MHz CLASS C, BASE STATIONS

RF&MICROWAVETRANSISTORS860-900MHzCLASSC,BASESTATIONS

SD1405

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

HFto2000MHzClassABCommonSource-PowerSO-10RF VHF/UHFradioanddigitalcellularBTSapplications HFto2000MHzclassABcommonsource-PowerFLAT VHF/UHFradioapplications HFto2000MHzclassABcommoncource-ceramicpackages UHFTVanddigitalcellularBTSapplications 2

SD1405

HF to 2000 MHz Class AB Common Source - PowerSO-10RF

HFto2000MHzClassABCommonSource-PowerSO-10RF VHF/UHFradioanddigitalcellularBTSapplications HFto2000MHzclassABcommonsource-PowerFLAT VHF/UHFradioapplications HFto2000MHzclassABcommoncource-ceramicpackages UHFTVanddigitalcellularBTSapplications 2to

SD1407

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION TheSD1407isa28VepitaxialsiliconNPNplanartransistordesignedprimarilyforSSBcommunications.Thisdeviceutilizesstate-of-the-artdiffusedemitterballastingforimprovedruggednessandreliability. ■30MHz ■28VOLTS ■IMD?30dB ■COMMONEMITTER ■GOLDMETALLIZATIO

SD1407

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: TheASISD1407isaclassABcommonEmitterTransistorDesignedforbroadbandamplifieroperationsupto30MHz. FEATURES: ?PG=15dBmin.at125W/30MHz ?Highlinearpoweroutput ?IMD3=-30dBcmax.at125W(PEP) ?Omnigold?MetalizationSystem