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SCT020W120G3-4AG數(shù)據(jù)手冊ST中文資料規(guī)格書
SCT020W120G3-4AG規(guī)格書詳情
描述 Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
特性 Features
? AEC-Q101 qualified
? Very fast and robust intrinsic body diode
? Extremely low gate charge and input capacitance
? Very high operating junction temperature capability (TJ = 200 °C)
? Source sensing pin for increased efficiency
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
24+ |
N/A |
62000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 | |||
ST/意法半導(dǎo)體 |
25+ |
原廠封裝 |
10280 |
詢價 | |||
AIM |
24+ |
8215 |
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費送樣,原廠技術(shù)支持!!! |
詢價 | |||
ST/意法半導(dǎo)體 |
25+ |
原廠封裝 |
10280 |
原廠授權(quán)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源！ |
詢價 | ||
ST |
22+ |
N/A |
8000 |
只做原裝正品 |
詢價 | ||
ST/意法半導(dǎo)體 |
25+ |
原廠封裝 |
9999 |
詢價 | |||
ST(意法) |
2511 |
4945 |
電子元器件采購降本 30%!盈慧通原廠直采,砍掉中間差價 |
詢價 | |||
ST |
22+ |
BGA |
1000 |
原裝正品碳化硅 |
詢價 | ||
ST |
47920 |
只做正品 |
詢價 | ||||
ST/意法半導(dǎo)體 |
25+ |
原廠封裝 |
11000 |
詢價 |
