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EL6F11

InfraredEmittingDiodes(GaAs)

KODENSHIKODENSHI_AUK CORP.

可天士可天士光電子集團

EL-6F11

InfraredEmittingDiodes(GaAs)

KODENSHIKODENSHI_AUK CORP.

可天士可天士光電子集團

EL6F11T

InfraredEmittingDiodes(GaAs)

KODENSHIKODENSHI_AUK CORP.

可天士可天士光電子集團

SMA6F11A

SurfaceMountTRANSZORB?TransientVoltageSuppressors

VishayVishay Siliconix

威世科技威世科技半導體

SMA6F11A

Surface-MountTRANSZORB?TransientVoltageSuppressors

FEATURES ?Verylowprofile-typicalheightof0.95mm ?Idealforautomatedplacement ?Unidirectionalonly ?Excellentclampingcapability ?Peakpulsepower: -600W(10/1000μs) -4kW(8/20μs) ?ESDcapability:IEC61000-4-2level4 -15kV(air) -8kV(contact) ?MeetsMSLleve

VishayVishay Siliconix

威世科技威世科技半導體

SMA6F11A

600WTVSinSMAFlat

Features ?Peakpulsepower:600W(10/1000μs)and4kW(8/20μs) ?Flatandthinpackage:1mm ?Stand-offvoltagerangefrom5Vto188V ?Unidirectionaltype ?Lowleakagecurrent:0.2μAat25°Cand1μAat85°C ?OperatingTjmax:175°C ?HighpowercapabilityatTjmax.:upto40

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

SMB6F11A

600WTVSinSMBFlat

Features ?Peakpulsepower:600W(10/1000μs)and4kW(8/20μs) ?Flatandthinpackage:1mm ?Stand-offvoltagerangefrom5Vto188V ?Unidirectionaltype ?Lowleakagecurrent:0.2μAat25°Cand1μAat85°C ?OperatingTjmax:175°C ?HighpowercapabilityatTjmax.:upto47

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

TA6F11A

Surface-MountPAR?TransientVoltageSuppressors

FEATURES ?Verylowprofile-typicalheightof0.95mm ?Junctionpassivationoptimizeddesign passivatedanisotropicrectifiertechnology ?TJ=185°Ccapabilitysuitableforhigh reliabilityandautomotiverequirement ?Idealforautomatedplacement ?Unidirectionalonly ?Excellentcl

VishayVishay Siliconix

威世科技威世科技半導體

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