首頁 >SC4603MLTRT>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
TO-3POWERTRANSISTORSOCKET | KEYSTONE Keystone Electronics Corp. | KEYSTONE | ||
7A竊?0VN-CHANNELMOSFET | KIAKIA Semiconductor Technology 可易亞半導(dǎo)體廣東可易亞半導(dǎo)體科技有限公司 | KIA | ||
ComplementaryEnhancementModeFieldEffectTransistor GeneralDescription TheAO4603usesadvancedtrenchtechnologyMOSFETstoprovideexcellentRDS(ON)andlowgatecharge.ThecomplementaryMOSFETsmaybeusedtoformalevelshiftedhighsideswitch,andforahostofotherapplications.StandardproductAO4603isPb-free(meetsROHS&Sony | AtmelAtmel Corporation 愛特梅爾愛特梅爾公司 | Atmel | ||
ComplementaryEnhancementModeFieldEffectTransistor GeneralDescription TheAO4603usesadvancedtrenchtechnologyMOSFETstoprovideexcellentRDS(ON)andlowgatecharge.ThecomplementaryMOSFETsmaybeusedtoformalevelshiftedhighsideswitch,andforahostofotherapplications.StandardproductAO4603isPb-free(meetsROHS&Sony | AtmelAtmel Corporation 愛特梅爾愛特梅爾公司 | Atmel | ||
ComplementaryEnhancementModeFieldEffectTransistor GeneralDescription TheAON4603usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThecomplementaryMOSFETsformahigh-speedpowerinverter,suitableforamultitudeofapplications.StandardProductAON4603isPb-free(meetsROHS&Sony259specifications). | AOSMDAlpha & Omega Semiconductors 萬國半導(dǎo)體美國萬國半導(dǎo)體 | AOSMD | ||
QL(AZ4)MicroLimitSwitch FEATURES 1.Subminiaturedesign Thesizeoftheactualunitisapproximately 1/10inthecaseoftheplunger modelandapproximately1/6.5inthe caseofthearmmodel,thatofthevertical typelimitswitch. Large-scaleminiaturizationhasbeen achieved.Idealforminiaturizedmachinery | PanasonicPanasonic Semiconductor 松下松下電器 | Panasonic | ||
SiliconLimiterDiodesandCeramicHermeticPackagedDevices Features ?Establishedlimiterdiodeprocess ?Highpower,mid-range,andcleanupdesigns ?Lowinsertionloss:0.1dB@10GHz ?Peakpowerhandlingto+74dBm ?Ultralowspikeleakagepower ?TightcontrolofIlayerbasewidth | SKYWORKSSkyworks Solutions Inc. 思佳訊美國思佳訊公司 | SKYWORKS | ||
LowVFandHighPowerDiode Description TheCTNS-4603Sisa300V,60A,fastrecoverydiode.ThemaximumVFof1.2Vandthemaximumtrrof100ns(IF:IRP=1:1)arerealizedbyoptimizingthetrade-offrelationshipbetweenVFandtrr.Thelowthermalresistancepackageachieveshighperformanceintermsofheatdissip | SankenSanken electric 三墾三墾電氣株式會社 | Sanken | ||
FastRecoveryandHighPowerDiode Features TheCTXS-4603Sisahighpowerandfastrecoverydiodewhichrealizeapeakreversevoltageof300V,atypicalforwardvoltagedropof1.05V(typ.)andtypicaltrr-timeof32ns(typ.)optimizingalife-timecontrol.Itsupportshigh-speedswitchingandreducesforward-loss. Thelowt | SankenSanken electric 三墾三墾電氣株式會社 | Sanken | ||
FastRecoveryDiode FEATURES ·LowForwardVoltage,HighEfficiency ·HighRecoverySpeed APPLICATIONS ·WhiteGoods ·PFCCircuit ·TelecommunicationDevice | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC |
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