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S4D20120H-A

Discrete SiC Schottky Diodes;

SMCSangdest Microelectronic (Nanjing) Co., Ltd

燒結(jié)金屬

ADC4D20120H

1200-VDirectWBGDiode

KeyFeatures: ?SiCperformance ?Easyparalleling ?Highcurrentcarryingcapability ?Verylowjunctioncapacitance ?HighlystableV FandQRRatelevated temperatures

AnalogPower

Analog Power

ADE4D20120D

1200-VDirectWBGDiode

KeyFeatures: ?SiCperformance ?Easyparalleling ?Highcurrentcarryingcapability ?Verylowjunctioncapacitance ?HighlystableV FandQRRatelevated temperatures

AnalogPower

Analog Power

ADE4D20120G

1200-VDirectWBGDiode

KeyFeatures: ?SiCperformance ?Easyparalleling ?Highcurrentcarryingcapability ?Verylowjunctioncapacitance ?HighlystableVFandQRRatelevated temperatures

AnalogPower

Analog Power

C4D20120A

SiliconCarbideSchottkyDiode

Z-REC?RECTIFIERSandZERO-RECOVERY?RECTIFIERS SILICONCARBIDEZ-FET?MOSFET

CreeCree, Inc

科銳

C4D20120A

4thGeneration1200V,20ASiliconCarbideSchottkyDiode

Description WiththeperformanceadvantagesofaSiliconCarbide(SiC) SchottkyBarrierdiode,powerelectronicssystemscanexpect tomeethigherefficiencystandardsthanSi-basedsolutions, whilealsoreachinghigherfrequenciesandpowerdensities. SiCdiodescanbeeasilyparalleledtom

WOLFSPEED

WOLFSPEED, INC.

C4D20120D

SiliconCarbideSchottkyDiodeZ-Rec?Rectifier

Features ?1.2-KVoltSchottkyRectifier ?ZeroReverseRecoveryCurrent ?High-FrequencyOperation ?Temperature-IndependentSwitchingBehavior ?PositiveTemperatureCoefficientonVF Benefits ?ReplaceBipolarwithUnipolarRectifiers ?EssentiallyNoSwitchingLosses ?HigherEfficienc

WOLFSPEED

WOLFSPEED, INC.

C4D20120D

SiliconCarbideSchottkyDiode

Z-REC?RECTIFIERSandZERO-RECOVERY?RECTIFIERS SILICONCARBIDEZ-FET?MOSFET

CreeCree, Inc

科銳

C4D20120D

CREESiliconCarbideMOSFETEvaluationKit

Description: ThisEvaluationkitismeanttodemonstratethehighperformanceofallCREE1200VMOSFETsandCREESchottkydiodes(SBD)instandardTO-247package.ThekitincludestwoCree80mOhm,1200VCREEMOSFETsandtwo1200V20Aschottkydiodes;ahalfbridgeconfiguredevaluationboardthat

CreeCree, Inc

科銳

C4D20120H

4thGeneration1200V,20ASiliconCarbideSchottkyDiode

Description WiththeperformanceadvantagesofaSiliconCarbide(SiC) SchottkyBarrierdiode,powerelectronicssystemscanexpect tomeethigherefficiencystandardsthanSi-basedsolutions, whilealsoreachinghigherfrequenciesandpowerdensities. SiCdiodescanbeeasilyparalleledtom

WOLFSPEED

WOLFSPEED, INC.

技術參數(shù)

  • Package：

    TO-247AC

  • VRWM（V）：

    1200

  • IO (A)：

    20

  • IFSM Max.(A)：

    238

  • IR Max.@VWM (μA)：

    25(1typical)

  • VF Max. (V)：

    1.8(1.5typical)

  • Part Status：

    Active

供應商型號品牌批號封裝庫存備注價格
TI
24+
QFP
6868
原裝現(xiàn)貨,可開13%稅票
 詢價
TIBB
20+
QFP
500
樣品可出,優(yōu)勢庫存歡迎實單
 詢價
TI/德州儀器
23+
QFP
3000
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
 詢價
TI
05+
原廠原裝
711
只做全新原裝真實現(xiàn)貨供應
 詢價
24+
3000
自己現(xiàn)貨
 詢價
TEXAS
24+
QFP
5000
十年品牌!原裝現(xiàn)貨!!!
 詢價
TI/德州儀器
23+
QFP
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
TI/德州儀器
24+
NA/
4250
原廠直銷,現(xiàn)貨供應,賬期支持!
 詢價
TI/德州儀器
21+
QFP
16800
只做原裝,質(zhì)量保證
 詢價
TI/德州儀器
25+
QFP
8880
原裝認準芯澤盛世！
 詢價
更多S4D20120H-A供應商 更新時間2025-7-27 14:01:00

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