描述 Description

DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package with the base connected to the flange.FEATURES
? Interdigitated structure provides high emitter efficiency
? Diffused emitter ballasting resistor providing excellent
?? current sharing and withstanding a high VSWR
? Gold metallization realizes very stable characteristics
?? and excellent lifetime
? Multicell geometry gives good balance of dissipated
?? power and low thermal resistance
? Internal input matching ensures good stability and
?? allows an easier design of wideband circuits.APPLICATIONS
? Common base class-C wideband pulsed power
?? amplifiers for L-band radar applications in the
?? 1.2 to 1.4 GHz band.

特性 Features

? Interdigitated structure provides high emitter efficiency
? Diffused emitter ballasting resistor providing excellent
?? current sharing and withstanding a high VSWR
? Gold metallization realizes very stable characteristics
?? and excellent lifetime
? Multicell geometry gives good balance of dissipated
?? power and low thermal resistance
? Internal input matching ensures good stability and
?? allows an easier design of wideband circuits.

應(yīng)用 Application

? Common base class-C wideband pulsed power
?? amplifiers for L-band radar applications in the
?? 1.2 to 1.4 GHz band.