首頁(yè) >RTL8208B-VE-LF>規(guī)格書(shū)列表
| 零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
SiT8208-DIP-datesheet.V1 | YXCSHENZHEN YANGXING TECHNOLOGY CO., LTD 揚(yáng)興深圳揚(yáng)興科技有限公司 | YXC | ||
UltraPerformanceOscillator | SITIMESiTime Corp. 賽特時(shí)脈美商賽特時(shí)脈股份有限公司 | SITIME | ||
DualN-ChannelEnhancementModeFieldEffectTransistor FEATURES ●SurfaceMountPackage. ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●ESDProtected. | SamhopSamHop Microelectronics Corp. 三合微科三合微科股份有限公司 | Samhop | ||
ATMInterconnect Description TheCelXpresT8208deviceintegratesalloftherequiredfunctionalitytotransportATMcellsacrossabackplanearchitecturewithhigh-speedcelltrafficexceeding1.5Gbits/stoamaximumof32destinations.Themanagementofmultipleservicecategoriesandmonitoringofperformance | agere Agere Systems | agere | ||
5.8WDUALAUDIOPOWERAMPLIFIER | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
HighEfficiency1MHz,2AStepUpRegulator | TECHCODETECHCODE SEMICONDUCTOR, INC. 泰德美國(guó)泰德半導(dǎo)體有限公司 | TECHCODE | ||
LithiumIonBatteryApplicationsNotebookPCApplicationsPortableEquipmentApplications | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
TOSHIBAFieldEffectTransistorSiliconNChannelMOSType(U-MOSIII) LithiumIonBatteryApplications NotebookPCApplications PortableEquipmentApplications ?Smallfootprintduetosmallandthinpackage ?Lowdrain-sourceONresistance:RDS(ON)=38m?(typ.) ?Highforwardtransferadmittance:|Yfs|=6.3S(typ.) ?Lowleakagecurrent:IDSS=10μA(ma | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
LithiumIonBatteryApplications | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA |
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
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