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UM2106B

ProductChangeNotification

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

UM2106D

ProductChangeNotification

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

UPG2106

L-BANDPADRIVERAMPLIFIER

DESCRIPTION TheμPG2106TBandμPG2110TBareGaAsMMICforPAdriveramplifierwithvariablegainfunctionwhichweredevelopedforPDC(PersonalDigitalCellularinJapan)andanotherL-bandapplication.Thedevicecanoperatewith3.0V,havingthehighgainandlowdistortion.TheμPG2106TBis

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPG2106TB

L-BANDPADRIVERAMPLIFIER

DESCRIPTION NECsUPG2106TBisaGaAsMMICforPAdriveramplifierswithvariablegainfunctionswhichwasdevelopedforL-bandapplications.Thedevicecanoperatewith3.0V,havinghighgainandlowdistortion. FEATURES ?LOWVOLTAGEOPERATION:VDD1=VDD2=3.0V,fRF=889to960MHz@

CEL

California Eastern Labs

UPG2106TB

L-BANDPADRIVERAMPLIFIER

DESCRIPTION TheμPG2106TBandμPG2110TBareGaAsMMICforPAdriveramplifierwithvariablegainfunctionwhichweredevelopedforPDC(PersonalDigitalCellularinJapan)andanotherL-bandapplication.Thedevicecanoperatewith3.0V,havingthehighgainandlowdistortion.TheμPG2106TBis

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPG2106TB

GaAsINTEGRATEDCIRCUITS

FEATURES ?Operationfrequency:mPG2106TB:fopt=889to960MHz :mPG2110TB:fopt=1429to1453MHz ?Supplyvoltage:mPG2106TB,mPG2110TB:VDD1,2=2.7to3.3V(3.0VTYP.) ?Circuitcurrent:mPG2106TB,mPG2110TB:IDD=25mATYP.@VDD1,2=3.0V,VAGC=2.5V,Pout=+8dBm ?

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

VN2106

N-ChannelEnhancement-ModeVerticalDMOSFETs

AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan

SUTEX

Supertex, Inc

VN2106N

N-ChannelEnhancement-ModeVerticalDMOSFETs

AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan

SUTEX

Supertex, Inc

VP2106

P-ChannelEnhancement-ModeVerticalDMOSFETs

AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpeda

SUTEX

Supertex, Inc

VP2106

P-ChannelEnhancement-ModeVerticalDMOSFET

GeneralDescription TheSupertexVP2106isanenhancement-mode(normally-off)transistorthatutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistors,andtheh

SUTEX

Supertex, Inc

詳細(xì)參數(shù)

  • 型號(hào):

    RSZ-2106HP

  • 制造商:

    RECOM

  • 制造商全稱:

    Recom International Power

  • 功能描述:

    1 Watt SMD Miniature Isolated Single Output

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24+
N/A
56000
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RECOM
23+
SIPDIP
11200
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中熔
24+
MODULE
1000
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ROHM
24+
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9200
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ROHM
1923+
原廠封裝
35689
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23+
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50000
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22+
SOT23
30000
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原裝ROHM
23+
SOT23
8560
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24+
NA/
15250
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2450+
SOT23
8850
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更多RSZ-2106HP供應(yīng)商 更新時(shí)間2025-7-26 11:06:00