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THN6501

NPNSiGeRFTRANSISTOR

□Features oLowNoiseFigure NF=1.0dBTyp.@f=1GHz,VCE=3V,IC=7mA oHighPowerGain MAG=15dBTyp.@f=1GHz,VCE=3V,IC=7mA oHighTransitionFrequency fT=9GHzTyp.@VCE=3V,IC=30mA □Application LNAandwidebandamplifieruptoGHzrange

TACHYONICS

Tachyonics CO,. LTD

THN6501E

NPNSiGeRFTRANSISTOR

□Features oLowNoiseFigure NF=1.0dBTyp.@f=1GHz,VCE=3V,IC=7mA oHighPowerGain MAG=15dBTyp.@f=1GHz,VCE=3V,IC=7mA oHighTransitionFrequency fT=9GHzTyp.@VCE=3V,IC=30mA □Application LNAandwidebandamplifieruptoGHzrange

TACHYONICS

Tachyonics CO,. LTD

THN6501E

SiGeNPNTransistor

□Features oLowNoiseFigure NF=1.0dBatf=1GHz,VCE=3V,IC=7mA oHighPowerGain MAG=15dBatf=1GHz,VCE=3V,IC=7mA oHighTransitionFrequency fT=9GHzatVCE=3V,IC=30mA □Application LNAandwidebandamplifieruptoGHzrange

AUK

AUK corp

THN6501F

SiGeNPNTransistor

□Features oLowNoiseFigure NF=1.0dBatf=1GHz,VCE=3V,IC=7mA oHighGain MAG=11.5dBatf=1GHz,VCE=10V,IC=20mA oHighTransitionFrequency fT=7GHzatf=1GHz,VCE=10V,IC=30mA □Application LNAandwidebandamplifieruptoGHzrange

AUK

AUK corp

THN6501S

NPNSiGeRFTRANSISTOR

□Features oLowNoiseFigure NF=1.0dBTyp.@f=1GHz,VCE=3V,IC=7mA oHighPowerGain MAG=15dBTyp.@f=1GHz,VCE=3V,IC=7mA oHighTransitionFrequency fT=9GHzTyp.@VCE=3V,IC=30mA □Application LNAandwidebandamplifieruptoGHzrange

TACHYONICS

Tachyonics CO,. LTD

THN6501S

SiGeNPNTransistor

□Features oLowNoiseFigure NF=1.0dBatf=1GHz,VCE=3V,IC=7mA oHighPowerGain MAG=15dBatf=1GHz,VCE=3V,IC=7mA oHighTransitionFrequency fT=9GHzatVCE=3V,IC=30mA □Application LNAandwidebandamplifieruptoGHzrange

AUK

AUK corp

THN6501U

NPNSiGeRFTRANSISTOR

□Features oLowNoiseFigure NF=1.0dBTyp.@f=1GHz,VCE=3V,IC=7mA oHighPowerGain MAG=15dBTyp.@f=1GHz,VCE=3V,IC=7mA oHighTransitionFrequency fT=9GHzTyp.@VCE=3V,IC=30mA □Application LNAandwidebandamplifieruptoGHzrange

TACHYONICS

Tachyonics CO,. LTD

THN6501U

SiGeNPNTransistor

□Features oLowNoiseFigure NF=1.0dBatf=1GHz,VCE=3V,IC=7mA oHighPowerGain MAG=15dBatf=1GHz,VCE=3V,IC=7mA oHighTransitionFrequency fT=9GHzatVCE=3V,IC=30mA □Application LNAandwidebandamplifieruptoGHzrange

AUK

AUK corp

THN6501Z

NPNSiGeRFTRANSISTOR

□Features oLowNoiseFigure NF=1.0dBTyp.@f=1GHz,VCE=3V,IC=7mA oHighPowerGain MAG=15dBTyp.@f=1GHz,VCE=3V,IC=7mA oHighTransitionFrequency fT=9GHzTyp.@VCE=3V,IC=30mA □Application LNAandwidebandamplifieruptoGHzrange

TACHYONICS

Tachyonics CO,. LTD

THN6501Z

SiGeNPNTransistor

□Features oLowNoiseFigure NF=1.0dBatf=1GHz,VCE=3V,IC=7mA oHighPowerGain MAG=15dBatf=1GHz,VCE=3V,IC=7mA oHighTransitionFrequency fT=9GHzatVCE=3V,IC=30mA □Application LNAandwidebandamplifieruptoGHzrange

AUK

AUK corp

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ORISTER
23+
SOP8
11200
原廠授權(quán)一級(jí)代理、全球訂貨優(yōu)勢(shì)渠道、可提供一站式BO
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8560
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7750
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ORISFER
23+
SOP8
50000
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NA/
25000
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ORISTE
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SOP-8
6430
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ORISTER
23+
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3000
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ORISTER
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6200
100%原裝正品現(xiàn)貨
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ORISTER
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SOP8
65
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
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更多RS6501-ADSG供應(yīng)商 更新時(shí)間2025-7-24 16:32:00

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