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RN2109

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

Switching,InverterCircuit,InterfaceCircuit andDriverCircuitApplications ●Withbuilt-inbiasresistors ●Simplifycircuitdesign ●Reduceaquantityofpartsandmanufacturingprocess ●ComplementarytoRN1107~RN1109

RN2109ACT

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

Switching,InverterCircuit,InterfaceCircuitand DriverCircuitApplications ?Extrasmallpackage(CST3)isapplicableforextrahighdensity fabrication. ?Incorporatingabiasresistorintoatransistorreducespartscount. ?Reducingthepartscountenablethemanufactureofevermor

RN2109F

Marking：YJ；Package：2-2HA1A；Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

Switching,InverterCircuit,InterfaceCircuit andDriverCircuitApplications ●Withbuilt-inbiasresistors ●Simplifycircuitdesign ●Reduceaquantityofpartsandmanufacturingprocess ●ComplementarytoRN1107F~RN1109F

RN2109MFV

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

Switching,InverterCircuit,InterfaceCircuit andDriverCircuitApplications ●Ultra-smallpackage,suitedtoveryhighdensitymounting ●Incorporatingabiasresistorintothetransistorreducesthenumberofparts,so enablingthemanufactureofevermorecompactequipmentandlowering

RN2109,LXHF(CT

Package：SC-75，SOT-416；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極（BJT）- 單，預(yù)偏置 描述：AUTO AEC-Q TR PNP Q1BSR=47KOHM,

Toshiba Semiconductor and Storage

RN2109ACT(TPL3)

Package：SC-101，SOT-883；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極（BJT）- 單，預(yù)偏置 描述：TRANS PREBIAS PNP 50V 0.08A CST3

Toshiba Semiconductor and Storage

RN2109CT(TPL3)

Package：SC-101，SOT-883；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極（BJT）- 單，預(yù)偏置 描述：TRANS PREBIAS PNP 20V 0.05A CST3

Toshiba Semiconductor and Storage