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UM2106

ATTENUATORANDPOWERPINDIODES2??30MHz

MicrosemiMicrosemi Corporation

美高森美美高森美公司

UM2106

PINDIODE

DESCRIPTION UM2100SeriesPINdiodesaredesignedfortransmit/receiveswitchandattenuatorapplicationsinHFband(2-30MHz)andbelow.Asseriesconfiguredswitches,theselonglifetime(25μstypical)diodescancontrolupto2.5kW,CWina50ohmsystem.InHFband,insertionlossisless

MicrosemiMicrosemi Corporation

美高森美美高森美公司

UM2106B

ProductChangeNotification

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

UM2106D

ProductChangeNotification

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

UPG2106

L-BANDPADRIVERAMPLIFIER

DESCRIPTION TheμPG2106TBandμPG2110TBareGaAsMMICforPAdriveramplifierwithvariablegainfunctionwhichweredevelopedforPDC(PersonalDigitalCellularinJapan)andanotherL-bandapplication.Thedevicecanoperatewith3.0V,havingthehighgainandlowdistortion.TheμPG2106TBis

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPG2106TB

L-BANDPADRIVERAMPLIFIER

DESCRIPTION NECsUPG2106TBisaGaAsMMICforPAdriveramplifierswithvariablegainfunctionswhichwasdevelopedforL-bandapplications.Thedevicecanoperatewith3.0V,havinghighgainandlowdistortion. FEATURES ?LOWVOLTAGEOPERATION:VDD1=VDD2=3.0V,fRF=889to960MHz@

CEL

California Eastern Labs

UPG2106TB

L-BANDPADRIVERAMPLIFIER

DESCRIPTION TheμPG2106TBandμPG2110TBareGaAsMMICforPAdriveramplifierwithvariablegainfunctionwhichweredevelopedforPDC(PersonalDigitalCellularinJapan)andanotherL-bandapplication.Thedevicecanoperatewith3.0V,havingthehighgainandlowdistortion.TheμPG2106TBis

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPG2106TB

GaAsINTEGRATEDCIRCUITS

FEATURES ?Operationfrequency:mPG2106TB:fopt=889to960MHz :mPG2110TB:fopt=1429to1453MHz ?Supplyvoltage:mPG2106TB,mPG2110TB:VDD1,2=2.7to3.3V(3.0VTYP.) ?Circuitcurrent:mPG2106TB,mPG2110TB:IDD=25mATYP.@VDD1,2=3.0V,VAGC=2.5V,Pout=+8dBm ?

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

VN2106

N-ChannelEnhancement-ModeVerticalDMOSFETs

AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan

SUTEX

Supertex, Inc

VN2106N

N-ChannelEnhancement-ModeVerticalDMOSFETs

AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan

SUTEX

Supertex, Inc

詳細參數(shù)

  • 型號：

    RN2106F

  • 功能描述：

    TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-416

供應商型號品牌批號封裝庫存備注價格
TOSHIBA
24+
SOT-423
3000
詢價
TOSHIBA/東芝
23+
SOT-523
11200
原廠授權一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO
 詢價
TOSHIBA
24+/25+
4000
原裝正品現(xiàn)貨庫存價優(yōu)
 詢價
Toshiba Semiconductor and Stor
25+
SC-75 SOT-416
9350
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
 詢價
TOS
2017+
NA
28562
只做原裝正品假一賠十!
 詢價
TOSHIBA
17PB
QFN
8000
現(xiàn)貨
 詢價
TOS
1923+
NA
9200
公司原裝現(xiàn)貨假一罰十特價歡迎來電咨詢
 詢價
TOSHIBA
23+
SOT723
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
TOSHIBA/東芝
23+
NA
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
TOSHIBA
24+
QFN
18560
假一賠十全新原裝現(xiàn)貨特價供應工廠客戶可放款
 詢價
更多RN2106F供應商 更新時間2025-7-23 15:30:00

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