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RN1132MFV

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)

SwitchingApplications InverterCircuitApplications InterfaceCircuitApplications DriverCircuitApplications ?Ultra-smallpackage,suitedtoveryhighdensitymounting ?Incorporatingabiasresistorintothetransistorreducesthenumberofparts,so enablingthemanufactureofevermor

RN1132MFV,L3F

Package：SOT-723；包裝：卷帶（TR） 類別：分立半導體產品 晶體管 - 雙極（BJT）- 單，預偏置 描述：TRANS PREBIAS NPN 50V 0.1A VESM

Toshiba Semiconductor and Storage

S1132

HIGHRIPPLE-REJECTIONANDLOWDROPOUT

S-1132

HIGHRIPPLE-REJECTIONANDLOWDROPOUTMIDDLEOUTPUTCURRENTCMOSVOLTAGEREGULATOR

S-1132

HIGHRIPPLE-REJECTIONLOWDROPOUTMIDDLEOUTPUTCURRENTCMOSVOLTAGEREGULATOR

HIGHRIPPLE-REJECTIONLOWDROPOUTMIDDLEOUTPUTCURRENTCMOSVOLTAGEREGULATOR S-1132Series TheS-1132Seriesisapositivevoltageregulatorwithalowdropoutvoltage,highoutputvoltageaccuracy,andlowcurrentconsumption(300mAoutputcurrent)developedbasedonCMOStechnology.A

SC1132CT

COMBINATIONSWITCHINGCONTROLLERANDLOWDROPOUTREGULATOR

SC1132CT-XY

COMBINATIONSWITCHINGCONTROLLERANDLOWDROPOUTREGULATOR

SI1132

Integratedambientlightsensor

SID1132KQ

Upto8ASingleChannelIGBT/MOSFETGateDriverAutomotiveApplicationsProvidingReinforcedGalvanicIsolation

Applications ?Electricvehiclepowertrain ?Electricvehicleon-boardchargersandchargerstations ?Highreliabilitydriversandinverters Description TheSID11x2KQisasinglechannelIGBTandMOSFETdriverinan eSOPpackage.ReinforcedgalvanicisolationisprovidedbyPower Integrat

SLD1132VS

635nmRedLaserDiode

Description TheSLD1132VSisaredlaserdiodedesignedforlaserpointers.Itswavelength(635nmtyp.)isshortenedby35nmandvisibilityisincreasedbyapproximately7times,comparedtotheconventionalvisiblelaserdiode(670nmtyp.). Features ?Shortwavelength(635nmtyp.) ?Smallpac