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RN1116

Bias resistor built-in transistor (BRT); Collector Current IC 0.1 A \nCollector-emitter voltage VCEO 50 V \n;

Application Scope：General-purpose\nPolarity：NPN\nInternal Connection：Single\nComplementary Product：RN2116\nAEC-Q101：Conform(*)\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 泰國\n

RN1116

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

RN1116

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

RN1116MFV

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)

SwitchingApplications InverterCircuitApplications InterfaceCircuitApplications DriverCircuitApplications ?Withbuilt-inbiasresistors ?Simplifycircuitdesign ?Reduceaquantityofpartsandmanufacturingprocess ?ComplementarytoRN2114MFVtoRN2118MFV

RN1116MFV

Bias resistor built-in transistor (BRT); Collector Current IC 0.1 A \nCollector-emitter voltage VCEO 50 V \n;

Application Scope：General-purpose\nPolarity：NPN\nInternal Connection：Single\nComplementary Product：RN2116MFV\nAEC-Q101：Conform(*)\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 泰國\n

RN1116,LF(CT

Package：SC-75，SOT-416；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導體產(chǎn)品 晶體管 - 雙極（BJT）- 單，預(yù)偏置 描述：TRANS PREBIAS NPN 50V 0.1A SSM

Toshiba Semiconductor and Storage

RN1116,LXHF(CT

Package：SC-75，SOT-416；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導體產(chǎn)品 晶體管 - 雙極（BJT）- 單，預(yù)偏置 描述：AUTO AEC-Q TR NPN Q1BSR=4.7KOHM,

Toshiba Semiconductor and Storage

RN1116MFV,L3F

Package：SOT-723；包裝：卷帶（TR） 類別：分立半導體產(chǎn)品 晶體管 - 雙極（BJT）- 單，預(yù)偏置 描述：TRANS PREBIAS NPN 50V 0.1A VESM

Toshiba Semiconductor and Storage