首頁 >RM60D2-H>規(guī)格書列表
零件編號(hào) | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
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SiliconNChannelIGBTApplication:Inverter Features ?Shortcircuitwithstandtime(5μstyp.) ?Lowcollectortoemittersaturationvoltage VCE(sat)=1.7Vtyp.(atIC=12A,VGE=15V,Ta=25°C) ?Builtinfastrecoverydiode(100nstyp.)inonepackage ?Trenchgateandthinwafertechnology ?Highspeedswitching tf= | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
SURFACEMOUNTBIDIRECTIONALTRANSIENTVOLTAGESUPPRESSOR | EIC EIC discrete Semiconductors | EIC | ||
SURFACEMOUNTBIDIRECTIONALTRANSIENTVOLTAGESUPPRESSOR | EIC EIC discrete Semiconductors | EIC | ||
SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR | EIC EIC discrete Semiconductors | EIC | ||
SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR VBR:6.8-440Volts PPK:600Watts FEATURES: *600Wsurgecapabilityat1ms *Excellentclampingcapability *Lowzenerimpedance *Fastresponsetime:typicallylessthen1.0psfrom0volttoVBR(min.) *TypicalIRlessthen1mAabove10V *Pb/RoHSFree | EIC EIC discrete Semiconductors | EIC |
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