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RJH60D2DPE

SiliconNChannelIGBTApplication:Inverter

Features ?Shortcircuitwithstandtime(5μstyp.) ?Lowcollectortoemittersaturationvoltage VCE(sat)=1.7Vtyp.(atIC=12A,VGE=15V,Ta=25°C) ?Builtinfastrecoverydiode(100nstyp.)inonepackage ?Trenchgateandthinwafertechnology ?Highspeedswitching tf=

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

STB60D2

SURFACEMOUNTBIDIRECTIONALTRANSIENTVOLTAGESUPPRESSOR

EIC

EIC discrete Semiconductors

STB60D2

SURFACEMOUNTBIDIRECTIONALTRANSIENTVOLTAGESUPPRESSOR

EIC

EIC discrete Semiconductors

STU60D2

SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR

EIC

EIC discrete Semiconductors

STU60D2

SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR

VBR:6.8-440Volts PPK:600Watts FEATURES: *600Wsurgecapabilityat1ms *Excellentclampingcapability *Lowzenerimpedance *Fastresponsetime:typicallylessthen1.0psfrom0volttoVBR(min.) *TypicalIRlessthen1mAabove10V *Pb/RoHSFree

EIC

EIC discrete Semiconductors

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