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SI2302

20VN-ChannelEnhancementModeMOSFET

VDS=20V RDS(ON),Vgs@4.5V,Ids@3.6A

SI2302

N-ChannelEnhancementModeFieldEffectTransistor

SI2302

N-ChannelEnhancementModeFieldEffectTransistor

Features ?Halogenfreeavailableuponrequestbyaddingsuffix-HF ?20V,3.0A,RDS(ON)=55mΩ@VGS=4.5V RDS(ON)=82mΩ@VGS=2.5V ?HighdensecelldesignforextremelylowRDS(ON) ?Ruggedandreliable ?Leadfreeproductisacquired ?SOT-23Package ?MarkingCode:S2 ?Epo

SI2302

Plastic-EncapsulateMOSFETS

N-Channel20-V(D-S)MOSFET FEATURE ●TrenchFETPowerMOSFET APPLICATION ●LoadSwitchforPortableDevices ●DC/DCConverter

SI2302

N-CHANNELMOSFETinaSOT-23PlasticPackage

DESCRIPTIONS N-CHANNELMOSFETinaSOT-23PlasticPackage. FEATURES SuperhighdensecelldesignforlowRDS(ON),SOT-23package. APPLICATIONS Batterymanagement,Highspeedswitch,lowpowerDCtoDCconverter.

SI2302

N-ChannelEnhancementModeMOSFET

Feature ●16V/3.6A,RDS(ON)=100mΩ(MAX)@VGS=4.5V. RDS(ON)=140mΩ(MAX)@VGS=2.5V. ●SuperHighdensecelldesignforextremelylowRDS(ON). ●ReliableandRugged. ●SOT-23forSurfaceMountPackage. Applications ●PowerManagementPortableEquipmenta

SI2302

Plastic-EncapsulateMOSFETS

SI2302

N-ChannelEnhancementMOSFET

N-ChannelEnhancementMOSFET ■FEATURES TrenchFETPowerMOSFET

SI2302

Plastic-EncapsulateMosfets

FEATURES ?HighdensecelldesignforextremelylowRDS(ON) ?Ruggedandreliable ?CaseMaterial:MoldedPlastic.

SI2302A

N-ChannelEnhancementModeFieldEffectTransistor

Features ?RuggedandReliable ?LeadFreeProductisAcquired ?HighDenseCellDesignforExtremelyLowRDS(ON) ?EpoxyMeetsUL94V-0FlammabilityRating ?MoistureSensitivityLevel1 ?HalogenFreeAvailableUponRequestbyAddingSuffix-HF ?LeadFreeFinish/RoHSCompliant(PSuffix