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RJP30E2

Silicon N Channel IGBT High Speed Power Switching

1.Trenchgatetechnology(G5Hseries) 2.LowcollectortoemittersaturationvoltageVCE(sat)=1.7Vtyp 3.Highspeedswitchingtf=150nstyp 4.LowleakcurrentICES=1μAmax 5.IsolatedpackageTO-220FL

RJP30E2

Silicon N Channel IGBT High Speed Power Switching / Vce(sat) = 1.7V typ;

1. Trench gate technology (G5H series)\n2. Low collector to emitter saturation voltage? VCE(sat)= 1.7 V typ\n3. High speed switching? tf = 150 ns typ\n4. Low leak current? ICES= 1 μA max\n5. Isolated package TO-220FL

RJP30E2DPK-M0

Silicon N Channel IGBT High Speed Power Switching

Features ?Trenchgatetechnology(G5Hseries) ?LowcollectortoemittersaturationvoltageVCE(sat)=1.7Vtyp ?Highspeedswitchingtf=150nstyp ?LowleakcurrentICES=1μAmax

RJP30E2DPP-M0

Silicon N Channel IGBT High Speed Power Switching

1.Trenchgatetechnology(G5Hseries) 2.LowcollectortoemittersaturationvoltageVCE(sat)=1.7Vtyp 3.Highspeedswitchingtf=150nstyp 4.LowleakcurrentICES=1μAmax 5.IsolatedpackageTO-220FL

RJP30E2DPK-M0

Silicon N Channel IGBT High Speed Power Switching; ? Trench gate technology (G5H series)\n? Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ\n? High speed switching tf = 150 ns typ\n? Low leak current ICES = 1 μA max;

RJP30E2DPP-M0

Silicon N Channel IGBT High Speed Power Switching;