描述 Description

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness.

特性 Features

? Low on-resistance RDS(on) = 0.036 Ω typ. (at ID = 22.5 A, VGS = 10 V, Ta = 25°C)
? Low leakage current
? High speed switching
文檔文檔標(biāo)題類型日期Power MOS FET APPLICATION NOTEPDF3.27 MB日本語應(yīng)用文檔 2022年4月25日Attention of Handling Semiconductor DevicesPDF648 KB日本語應(yīng)用文檔 2021年4月16日RJK2017DPP-M0 DatasheetPDF80 KB數(shù)據(jù)手冊(cè) 2012年2月3日功率MOS FET 功率MOS FET使用時(shí)的注意事項(xiàng)PDF1.60 MB其他 2008年2月7日功率MOS FET 應(yīng)用例子PDF721 KB其他 2008年2月7日可靠性手冊(cè)PDF15.93 MB其他 2007年9月26日Addhidden documents 項(xiàng)目info: For device-specific or order-specific documentation, submit a support request.developer_board設(shè)計(jì)和開發(fā)模型ECAD 模塊Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.擴(kuò)展 ECAD 模塊 產(chǎn)品選擇Loading products for parametric search...產(chǎn)品選擇導(dǎo)出settings切換fullscreen全屏settings_backup_restore重置help小貼士器件號(hào)
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