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RJK0214DPA

Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching

Features ?Lowon-resistance ?Capableof4.5Vgatedrive ?Highdensitymounting ?Pb-free ?Halogen-free Applications DC-DCconversionforPCandServer.

RJK0214DPA

Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching;

STN0214

VeryhighvoltageNPNpowertransistor

Description ThedeviceisanNPNpowerbipolartransistormanufacturedusingthelatesthigh-voltagediffusedcollectortechnology. Features ■Highgain ■Veryhighvoltagecapability Applications ■Haptic ■Highvoltagesolenoiddriving

TB0214A

IFSAWFilterLow-Loss70MHz(BW=16MHz)

MaximumRating: 1.InputPowerLevel:+20dBm 2.OperatingTemperature:-10°Cto+70°C 3.StorageTemperature:-40°Cto+85°C

TB0214A

Low-Loss70MHzIFSAWFilter(BW=16MHz)

MaximumRating: 1.InputPowerLevel:+20dBm 2.OperatingTemperature:-10°Cto+70°C 3.StorageTemperature:-40°Cto+85°C

TB0214B

Low-Loss70MHzIFSAWFilter(SMD13.3?6.5mm)

TF0214A

SAWDPX1950/2140MHzLTEBand1SMD1.8X1.4mm(BW=59.04MHz)

TZ0214A

SMD5.0x3.212MHzCrystalUnit

Features: SurfaceMountHermeticPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature UltraMiniaturePackage DescriptionandApplications: Surfacemount5.0mmx3.2mmcrystalunitforuseinwirelesscommunicationsdevices, especiallyforan

XP0214A

ALLDIMENSIONSINMM[INCH]

XR0214P

ALLDIMENSIONSINMM[INCH].