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RJE0607JSP

Silicon P Channel MOS FET Series Power Switching; ? High endurance capability against to the short circuit.\n? Built-in the over temperature shut-down circuit.\n? Latch type shut down operation (need 0 voltage recovery).\n? Built-in the current limitation circuit.\n? Low on-resistance RDS(on) : 140 mΩ Typ, 260 mΩ Max (VGS = –10 V)\n? High density mounting\n? AEC-Q101 Compliant\n;

This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. .

RJE0607JSP

Silicon P Channel MOS FET Series Power Switching

RJE0607JSP_15

Silicon P Channel MOS FET Series Power Switching

RJE0607JSP-00-J0

Silicon P Channel MOS FET Series Power Switching

RJE0607JSP-00#J0

Package：8-SOIC（0.154"，3.90mm 寬）；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：集成電路（IC） 配電開關(guān)，負(fù)載驅(qū)動(dòng)器 描述：ABU / MOSFET

ETC