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RFP12N10L

絲印：F12N10L；Package：TO-220AB；12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsspecificallydesignedforusewithlogiclevel(5V)drivingsourcesinapplicationssuchasprogrammablecontrollers,automotiveswitchingandsolenoiddrivers.Thisperformanceisaccomplishedthroughaspecialgate

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

RFP12N10L

12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsspecificallydesignedforusewithlogiclevel(5V)drivingsourcesinapplicationssuchasprogrammablecontrollers,automotiveswitchingandsolenoiddrivers.Thisperformanceisaccomplishedthroughaspecialgate

Intersil

Intersil Corporation

RFP12N10L

N-Channel Logic Level Power Field-Effect Transistors (L2 FET)

TheRFM12N08LandRFM12N10LandtheRFP12N08LandRFP12N10Laren-channelenhancement-modesilicon-gatepowerfield-effecttransistorsspecificallydesignedforusewithlogiclevel(5volt)drivingsourcesinapplicationssuchasprogrammablecontrollers,automotiveswitching,andsolenoiddriver

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

RFP12N10L

12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET

These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching and solenoid drivers. This performance is accomplished through a special gate ox; ? 12A, 100V\n?rDS(ON)= 0.200?\n? Design Optimized for 5V Gate Drives\n? Can be Driven Directly from QMOS, NMOS,TTL Circuits\n? Compatible with Automotive Drive Requirements\n? SOA is Power-Dissipation Limited\n? Nanosecond Switching Speeds\n? Linear Transfer Characteristics\n? High Input Impedance\n;

RenesasRenesas Technology Corp

瑞薩瑞薩科技有限公司

RFP12N10L

N 溝道，邏輯電平，功率 MOSFET，100V，12A，200mΩ

這些N溝道加強(qiáng)模式硅柵極功率場效應(yīng)晶體管設(shè)計(jì)用于邏輯電平(5V)驅(qū)動(dòng)源，適合可編程控制器、車用開關(guān)和電磁閥驅(qū)動(dòng)器等應(yīng)用。 這種性能通過一個(gè)特殊的柵極氧化設(shè)計(jì)來實(shí)現(xiàn)，在柵極偏置范圍為3V到5V時(shí)提供完整的額定電導(dǎo)，從而可以通過邏輯電路電源電壓直接實(shí)現(xiàn)真正的開-關(guān)電源控制。 以前的開發(fā)類型為TA09526。; ?12A, 100V\n?rDS(ON)= 0.200Ω\n?針對(duì)5V柵極驅(qū)動(dòng)優(yōu)化的設(shè)計(jì)\n?可直接從CMOS、NMOS、TTL電路驅(qū)動(dòng)\n?與車用驅(qū)動(dòng)要求兼容\n?SOA為有限功耗\n?納秒開關(guān)速度\n?線性傳遞特性\n?高輸入阻抗\n?多數(shù)載流子器件\n?相關(guān)文獻(xiàn)\n;

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

RFP12N10L

Trans MOSFET N-CH 100V 12A 3-Pin(3+Tab) TO-220AB Rail

NJS

New Jersey Semiconductor

RFP12N10L

N-Channel 100-V (D-S) MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

技術(shù)參數(shù)

  • Pb-free：

    Pb

  • Status：

    Active

  • Channel Polarity：

    N-Channel

  • Configuration：

    Single

  • V(BR)DSS Min (V)：

    100

  • VGS Max (V)：

    ±10

  • VGS(th) Max (V)：

    2

  • ID Max (A)：

    12

  • PD Max (W)：

    60

  • RDS(on) Max @ VGS = 10 V(mΩ)：

    200

  • Ciss Typ (pF)：

    900

  • Package Type：

    TO-220-3

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
FAIRCHILD/仙童
24+
TO220
8950
BOM配單專家,發(fā)貨快,價(jià)格低
 詢價(jià)
onsemi(安森美)
24+
TO-220
7828
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價(jià)
FAIRCHILDONSEMICONDUCTOR
21+
NA
30
只做原裝,假一罰十
 詢價(jià)
HAR
24+
N/A
5000
公司存貨
 詢價(jià)
FSC
17+
TO-220
6200
詢價(jià)
INTERSIL
23+
TO-220
5000
原裝正品,假一罰十
 詢價(jià)
FAIRCHILD
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
ONSemiconductor
24+
NA
3000
進(jìn)口原裝正品優(yōu)勢供應(yīng)
 詢價(jià)
FAIRCHILD
1726+
TO-220
6528
只做進(jìn)口原裝正品現(xiàn)貨,假一賠十!
 詢價(jià)
Intersi
23+
TO-220
8560
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
 詢價(jià)
更多RFP12N10L供應(yīng)商 更新時(shí)間2025-7-31 16:36:00

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