Product Description

The RF2335 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50? gain block. Applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 6000MHz. The device is self-contained with 50? input and output impedances and requires only two external DC biasing elements to operate as specified. The RF2335 is available in a very small industry-standard SOT23 5-lead surface mount package, enabling compact designs which conserve board space

特性 Features

? DC to 6000MHz Operation

? Internally matched Input and Output

? 12dB Small Signal Gain

? +33dBm Output IP3

? +17dBm Output Power

? Good Gain Flatness

Typical Applications

? Broadband, Low Noise Gain Blocks

? IF or RF Buffer Amplifiers

? Driver Stage for Power Amplifiers

? Final PA for Low Power Applications

? Broadband Test Equipment