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BUZ10S2

SIPMOSPowerTransistor(NchannelEnhancementmodeAvalanche-rated)

SIPMOS?PowerTransistor ?Nchannel ?Enhancementmode ?Avalanche-rated

SIEMENSSiemens Semiconductor Group

西門子德國(guó)西門子股份公司

BUZ10S2

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=23A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.07Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

DF10S2

BridgeRectifier

ee Description Withtheever-pressingneedtoimprovepowersupplyefficiency,improvesurgerating,improvereliability,andreducesize,theDFxS2familysetsanewstandardinperformance. Thenewdesignoffersanimprovedsurgeratingof85A.Thisisespeciallyimportantwhenstrivingtoi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

MO10S2B-C

MO10S2BForcepointCompatibleTransceiverSFP10GBase-SR(850nm,MMF,300m,DOM)

Features ATGBICSMO10S2B?10GBase-SRsupportsadistanceofupto300movermulti-modefibre?(MMF)usingawavelengthof850nmviaanLCconnector. Digitalopticalmonitoring(DOM)supportisalsopresentenablingreal-time?monitoringoftheparametersofthefibre?optictransceiver. Ourproduct

ATGBICS

ATGBICS by Approved Technology

PB10S2

SINGLE-PHASESILICONBRIDGERECTIFIER

NIEC

Nihon Inter Electronics Corporation

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