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絲?。?strong>R13；SILICON TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD FEATURES ? Excellent Low NF in Low Frequency Band ? Low Voltage Use ? Low Cob : 0.9 pF TYP. ? Low Noise Voltage : 90 mV TYP. ? Super Mini Mold Package. EIAJ : SC-70

文件：201.84 Kbytes 頁(yè)數(shù)：14 Pages

RENESAS

瑞薩

絲?。?strong>R13；WE-MAPI SMT Power Inductor

General Information: Ambient Temperature (referring to IRP) -40 °C up to +85 °C Operating Temperature -40 °C up to +125 °C Storage Conditions (in original packaging)

文件：901.79 Kbytes 頁(yè)數(shù)：8 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍爾特伍爾特集團(tuán)

絲?。?strong>R13；Package：SOT-23；P-Channel Power MOSFET

文件：652.32 Kbytes 頁(yè)數(shù)：4 Pages

PJSEMI

平晶半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/r13b/marking.html">R13B；Package：VSSOP；DMOS 400mA Low-Dropout Regulator

FEATURES CAP-FREE DMOS TOPOLOGY: Ultra Low Dropout Voltage: 250mV typ at 400mA Output Capacitor not Required for Stability UP TO 500mA PEAK, TYPICAL FAST TRANSIENT RESPONSE VERY LOW NOISE: 28μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 850μA at IOUT = 400mA Not Enabled: IG

文件：667.83 Kbytes 頁(yè)數(shù)：22 Pages

TI2

德州儀器

絲?。?a target="_blank" title="Marking" href="/r13b/marking.html">R13B；Package：VSSOP；DMOS 400mA Low-Dropout Regulator

FEATURES CAP-FREE DMOS TOPOLOGY: Ultra Low Dropout Voltage: 250mV typ at 400mA Output Capacitor not Required for Stability UP TO 500mA PEAK, TYPICAL FAST TRANSIENT RESPONSE VERY LOW NOISE: 28μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 850μA at IOUT = 400mA Not Enabled: IG

文件：667.83 Kbytes 頁(yè)數(shù)：22 Pages

TI2

德州儀器

絲印：R13B；Package：VSSOP；DMOS 400mA Low-Dropout Regulator

FEATURES CAP-FREE DMOS TOPOLOGY: Ultra Low Dropout Voltage: 250mV typ at 400mA Output Capacitor not Required for Stability UP TO 500mA PEAK, TYPICAL FAST TRANSIENT RESPONSE VERY LOW NOISE: 28μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 850μA at IOUT = 400mA Not Enabled: IG

文件：667.83 Kbytes 頁(yè)數(shù)：22 Pages

TI2

德州儀器

絲?。?a target="_blank" title="Marking" href="/r13b/marking.html">R13B；Package：VSSOP；DMOS 400mA Low-Dropout Regulator

FEATURES CAP-FREE DMOS TOPOLOGY: Ultra Low Dropout Voltage: 250mV typ at 400mA Output Capacitor not Required for Stability UP TO 500mA PEAK, TYPICAL FAST TRANSIENT RESPONSE VERY LOW NOISE: 28μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 850μA at IOUT = 400mA Not Enabled: IG

文件：667.83 Kbytes 頁(yè)數(shù)：22 Pages

TI2

德州儀器

絲印：R13B；Package：SOT-23；DMOS 400mA Low-Dropout Regulator

FEATURES CAP-FREE DMOS TOPOLOGY: Ultra Low Dropout Voltage: 250mV typ at 400mA Output Capacitor not Required for Stability UP TO 500mA PEAK, TYPICAL FAST TRANSIENT RESPONSE VERY LOW NOISE: 28μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 850μA at IOUT = 400mA Not Enabled: IG

文件：667.83 Kbytes 頁(yè)數(shù)：22 Pages

TI2

德州儀器

絲印：R13B；Package：SOT-23；DMOS 400mA Low-Dropout Regulator

FEATURES CAP-FREE DMOS TOPOLOGY: Ultra Low Dropout Voltage: 250mV typ at 400mA Output Capacitor not Required for Stability UP TO 500mA PEAK, TYPICAL FAST TRANSIENT RESPONSE VERY LOW NOISE: 28μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 850μA at IOUT = 400mA Not Enabled: IG

文件：667.83 Kbytes 頁(yè)數(shù)：22 Pages

TI2

德州儀器

絲?。?a target="_blank" title="Marking" href="/r13b/marking.html">R13B；Package：SOT-23；DMOS 400mA Low-Dropout Regulator

FEATURES CAP-FREE DMOS TOPOLOGY: Ultra Low Dropout Voltage: 250mV typ at 400mA Output Capacitor not Required for Stability UP TO 500mA PEAK, TYPICAL FAST TRANSIENT RESPONSE VERY LOW NOISE: 28μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 850μA at IOUT = 400mA Not Enabled: IG

文件：667.83 Kbytes 頁(yè)數(shù)：22 Pages

TI2

德州儀器