描述 Description

Qorvo's QPA2212D is a Ka-band power amplifier fabricated on Qorvo's 0.15um GaN on SiC process (QGaN15). Operating between 27 and 31 GHz, it achieves 10 W linear power with ?25 dBc intermodulation distortion products and 22 dB small signal gain. Saturated output power is 25 W with power-added efficiency of 25%.
QPA2212D is ideally suited to support satellite communications and 5G infrastructure.
To simplify system integration, the QPA2212D is fully matched to 50 ohms with integrated DC blocking caps on both I/O ports.
The QPA2212D is 100% DC and RF tested on-wafer to ensure compliance to electrical specifications.
Lead-free and RoHS compliant.
For additional information on GaN thermal performance refer to the following application note and video.

特性 Features

? Frequency Range: 27?–?31 GHz
? PSAT (PIN = 25 dBm): > 43.4 dBm
? PAE (PIN = 25 dBm): > 25 %
? Power Gain (PIN = 25 dBm): > 18.4 dB
? IMD3 (at 37 dBm/tone): D = 22 V, IDQ = 460 mA
? Die Dimensions: 3.630 x 5.040 x 0.050 mm

應(yīng)用 Application

? 5G Infrastructure
? Satellite Communications