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QPA1011D

7.9 -?11?GHz 25?Watt GaN Power Amplifier; ? Frequency Range: 7.9 -?11?GHz\n? PSAT: 45?dBm at PIN = 25?dBm\n? PAE: 37?% at PIN = 25?dBm\n? Large Signal Gain: 20 dB at PIN = 25 dBm\n? Small Signal Gain: 26 dB\n? Integrated Power Detector\n? Bias: VD = 24?V, IDQ = 1200 mA, VG = -2.0?V Typical\n? Pulsed VD: PW = 100 us, DC = 10%\n? Chip Dimensions: 2.75 x 3.12 x 0.10?mm\n;

Qorvo's QPA1011D is a X-band high power MMIC amplifier fabricated on Qorvo's production 0.15um GaN on SiC process (QGaN15). The QPA1011D operates from 7.9 - 11 GHz and typically provides 25 W saturated output power with power-added efficiency of 37% and large-signal gain of 20 dB.? This combination of wideband performance provides the flexibility designers are looking for to improve system performance while reducing size and cost.\nQPA1011D can also support a variety of operating conditions to best support system requirements. With good thermal properties, it can support a range of bias voltages and will perform well under both CW and pulse operations.\nThe QPA1011D is matched to 50 ohm with integrated DC blocking capacitors on both RF I/O ports simplifying system integration. The wideband performance and operational flexibility allows it support satellite communication and data links, as well as, military and commercial radar systems.\nThe QPA1011D is 100% DC and RF tested on-wafer to ensure compliance to electrical specifications.\nLead-free and RoHS compliant.\nEvaluation boards are available upon request.\n

QPA1011D

25 W GaN Power Amplifier

QPA1011D

7.9 ??11.0 GHz 25 W GaN Power Amplifier

QPA1011DPCB4B01

7.9 ??11.0 GHz 25 W GaN Power Amplifier

QPA1011SR

7.9–11.0GHz25WGaNPowerAmplifier

ProductFeatures ?FrequencyRange:7.9–11GHz ?POUT(PIN=25dBm):44.5dBm ?PAE(PIN=25dBm):40 ?PowerGain(PIN=25dBm):19.5dB ?IM3((POUT/Tone=38dBm):-20dBc ?SmallSignalGain:28dB ?IntegratedPowerDetector ?Bias:VD=24V,IDQ=1200mA,VG=?1.9V

QPD1011

30??1200MHz,50V,7WGaNRFInput-MatchedTransistor

QPD1011

30–1200MHz,50V,7WGaNRFInput-MatchedTransistor

KeyFeatures ?Frequency:30to1200MHz ?OutputPower(P3dB)1:8.7W ?LinearGain1:21dB ?TypicalPAE3dB 1:60 ?OperatingVoltage:50V ?CWandPulsecapable

QPD1011SQ

30??1200MHz,50V,7WGaNRFInput-MatchedTransistor

QPD1011SR

30??1200MHz,50V,7WGaNRFInput-MatchedTransistor

QPD1011SR

30–1200MHz,50V,7WGaNRFInput-MatchedTransistor

KeyFeatures ?Frequency:30to1200MHz ?OutputPower(P3dB)1:8.7W ?LinearGain1:21dB ?TypicalPAE3dB 1:60 ?OperatingVoltage:50V ?CWandPulsecapable