最新无码a∨在线观看,一本av高清一区二区三区,亚洲熟妇色l20p,宅男噜噜69av,中出あ人妻熟女中文字幕

QM0016F

Middle Voltage Power MOSFET 40V~200V; ·Advanced high cell density Trench technology.\n ·Super Low Gate Charge.\n ·Excellent CdV/dt effect decline.\n ·100% EAS Guaranteed\n ·Green Device Available.;

The QM0016F is the highest performance trenchN-ch MOSFETs with extremehigh cell density ,which provide excellent RDSON and gate charge f or most of thesynchronous buck converter a pplications.\n\n The QM0016F meet the RoHS and Green Product r equirement , 100% EAS guaranteedwith full f unction reliability approved. \n\n

QM0016F

N-Ch 100V Fast Switching MOSFETs

QM0016P

N-Channel100-V(D-S)MOSFET

QM0016P

N-Ch100VFastSwitchingMOSFETs

QM0016P

N-ChannelMOSFETusesadvancedtrenchtechnology

QM0016S

N-Channel100V(D-S)MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?ExtremelyLowQgdforSwitchingLosses ?100RgTested ?100AvalancheTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?PrimarySideSwitch

QM0016S

N-ChannelMOSFETusesadvancedtrenchtechnology

QPA0016

13.75–14.5GHz15WattGaNPowerAmplifier

ProductOverview Qorvo'sQPA0016isahighpower,packagedKu-Band MMICamplifierfabricatedusingQorvo'sproduction0.15 umGaN-on-SiCprocess(QGaN15).TheQPA0016targets the13.75-14.5GHzSatcombandwhileproviding5-Watts oflinearpowerwiththird-orderintermodulationdistortion pr

QPA0016EVB

13.75–14.5GHz15WattGaNPowerAmplifier

ProductOverview Qorvo'sQPA0016isahighpower,packagedKu-Band MMICamplifierfabricatedusingQorvo'sproduction0.15 umGaN-on-SiCprocess(QGaN15).TheQPA0016targets the13.75-14.5GHzSatcombandwhileproviding5-Watts oflinearpowerwiththird-orderintermodulationdistortion pr

QTAN0016

DiagnosticModesforQTICs