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PTVS12VS1UTR-Q

絲?。?a target="_blank" title="Marking" href="/cd/marking.html">CD;Package:SOD123W;High-temperature 400 W Transient Voltage Suppressor

1.Generaldescription 400WunidirectionalTransientVoltageSuppressor(TVS)inaSOD123Wsmallandflatlead low-profileSurface-MountedDevice(SMD)plasticpackage,designedfortransientovervoltage protectioninhigh-temperatureapplications. 2.Featuresandbenefits ?Ratedpeakpulse

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PTVS12VS1UTR-Q

High-temperature 400 W Transient Voltage Suppressor; ? Rated peak pulse power: PPPM = 400 W (350 W for 3V3)\n? Reverse standoff voltage range: VRWM = 3.3 V to 64 V\n? Reverse current: IRM = 0.001 μA\n? Very low package height: 1 mm\n? High temperature stability Tj ≤ 185 °C\n? Small plastic package suitable for surface-mounted design\n? Qualified according to AEC-Q101 and recommended for use in automotive applications\n;

400 W unidirectional Transient Voltage Suppressor (TVS) in a SOD123W small and flat lead low-profile Surface-Mounted Device (SMD) plastic package, designed for transient overvoltage protection in high-temperature applications.\n

NexperiaNexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PESD12VS1UA

TransientVoltageSuppression(TVS)

Features nTransientVoltageSuppression(TVS) protectionofoneline nESDprotectionupto30kV nMax.peakpulsepower:PPP=890W nIEC61000-4-2;level4(ESD) nLowclampingvoltage:VCL=19V nIEC61000-4-5(surge);IPP=47A nLowleakagecurrent:IRM=300nA nAEC-Q101qual

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺半導體廣東友臺半導體有限公司

PESD12VS1UA

UnidirectionalESDprotectionfortransientvoltagesuppression

1.1Generaldescription UnidirectionalElectroStaticDischarge(ESD)protectiondiodesinaverysmall Surface-MountedDevice(SMD)plasticpackagedesignedtoprotectonesignalline fromthedamagecausedbyESDandtransientovervoltage. 1.2Features 1.3Applications Table1.Productover

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PESD12VS1UA-Q

UnidirectionalESDprotectionfortransientvoltagesuppression

1.Generaldescription UnidirectionalElectroStaticDischarge(ESD)protectiondiodesinaverysmallSOD323Surface- MountedDevice(SMD)plasticpackagedesignedtoprotectonesignallinefromthedamage causedbyESDandtransientovervoltage. 2.Featuresandbenefits ?TransientVoltag

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PESD12VS1UB

UnidirectionalESDprotectionofoneline

Generaldescription UnidirectionalESDprotectiondiodein aSOD523plasticpackagedesigned toprotectonetransmissionordata linefromthedamagecausedbyESD (ElectroStaticDischarge)andother transients. Features UnidirectionalESDprotectionofoneline Max.peakpulsepower:P

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺半導體廣東友臺半導體有限公司

PESD12VS1UB

ESDprotectiondiodesinSOD523package

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PESD12VS1UB

ESDprotectiondiodeinSOD523package

1.Generaldescription UnidirectionalElectroStaticDischarge(ESD)protectiondiodeinaSOD523plasticpackage designedtoprotectonetransmissionordatalinefromthedamagecausedbyESDandother transients. 2.Featuresandbenefits ?UnidirectionalESDprotectionofoneline ?Low

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PESD12VS1UB-Q

ESDprotectiondiode

1.Generaldescription UnidirectionalElectroStaticDischarge(ESD)protectiondiodeinaSOD523plasticpackage, designedtoprotectonetransmissionordatalinefromthedamagecausedbyESDandother transients. 2.Featuresandbenefits ?UnidirectionalESDprotectionofoneline ?Low

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PESD12VS1UJ

TransientVoltageSuppression(TVS)protectionofoneline

Description UnidirectionalElectroStaticDischarge(ESD) protectiondiodesinaverysmallSurface- MountedDevice(SMD)plasticpackage designedtoprotectonesignallinefromthe damagecausedbyESDandtransient overvoltage. Features TransientVoltageSuppression(TVS) protectiono

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺半導體廣東友臺半導體有限公司

技術參數

  • PPPM @10/1000 μs [max] (W):

    400

  • VRWM (V):

    12

  • VRWM (V):

    13

  • Configuration:

    Unidirectional

  • Nr of lines:

    1

  • VBR [min] (V):

    13.3

  • VBR [max] (V):

    14.7

  • VCL @ IPPM 10/1000 μs [max] (V):

    19.9

  • IPPM @10/1000 μs [max] (A):

    20.1

  • IRM [max] (μA):

    2.5

  • Tj [max] (°C):

    185

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更多PTVS12VS1UTR-Q供應商 更新時間2025-7-28 17:55:00