描述 Description

High Power RF LDMOS FET, 208 W, 48 V, 746?– 960 MHz

特性 Features

·Broadband internal input matching
·Asymmetrical Doherty design - Main : P 1dB =?190 W Typ - Peak : P 1dB =?250 W Typ
·Typical Pulsed CW performance, 875 MHz, 48 V, combined outputs - Output power at P 1dB = 208 W - Efficiency = 56% - Gain = 18.7 dB
·Capable of handling 10:1 VSWR @48 V, 208 W (CW) output power
·Integrated ESD protection
·Human Body Model Class?2 (per ANSI/ESDA/ JEDEC JS-001)
·Low thermal resistance
·Pb-free and RoHS compliant
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