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PTMA080152MV1

RF Power Amplifier ICs; Broadband on-chip matching, 50-ohm input and ~10-ohm output\n Typical GSM/EDGE performance at 28 V, 920 to 960 MHz - 30?dB gain,?34% efficiency?@ 8?W output power,? - 1.5% EVM @ 8W,? - –61?dBc ACPR @ 400 kHz, - –75?dBc ACPR @ 600 kHz\n Typical CW performance, 940 MHz, 28 V: - 20 W P OUT at P1dB,?49%?efficiency\n Integrated ESD protection. Meets HBM Class 1B (minimum), per JESD22-A114F\n Excellent thermal stability, low HCI drift\n Capable of handling 10:1 VSWR @ 28 V, 20 W (CW) output power\n Pb-Free and RoHS-compliant\n Package: PG-DSO-20-63, surface mount\n;

Wideband RF LDMOS Integrated Power Amplifier 15 W, 28 V, 700 – 1000 MHz

PTMA080152MV1AUMA1

Package：20-SOIC（0.433"，11.00mm 寬）裸露焊盤；包裝：散裝 類別：RF/IF，射頻/中頻和 RFID 射頻放大器 描述：IC AMP GSM 700MHZ-1GHZ DSO20-63

PTMA080152MV1AUMA1

Infineon Technologies
N/A

Infineon Technologies

PTMA080302MV1AUMA1

Infineon Technologies
N/A

Infineon Technologies

PTMA180152MV1

Infineon Technologies
N/A

Infineon Technologies