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PTGH7565S1

絲?。?a target="_blank" title="Marking" href="/tgh7565s1/marking.html">TGH7565S1；Package：TO-247-3L；High speed 650V Field Stop Trench IGBT co-packed with fast and soft recovery anti-parallel diode

Features ?SuperiorhighspeedswitchingIGBT ?Lowsaturationvoltage1.65VatTVJ25oC ?Co-packedwithlowQrrandsoftrecoverydiode ?MaximumjunctiontemperatureTVJ175oC ?EasyparallelingusageduetopositivecoefficientVCEsat ?LeadfreeincompliancewithEURoHS2.0 ?Green

PTGH7565S1

High Speed IGBTs(20-40 KHz , 650V); ? Low saturation voltage 1.65V at TVJ 25 oC\n? Co-packed with low Qrr and soft recovery diode\n? Maximum junction temperature TVJ 175 oC\n? Easy paralleling usage due to positive coefficient VCEsat\n? Lead free in compliance with EU RoHS 2.0\n? Green molding compound as per IEC 61249 standard;

PTGH7565S1 is engineered using field-stop trench technology, featuring a high-density trench cell design. This design assembled in TO-247-3L package ensures Low VCESAT with low conduction losses, outstanding switching capabilities, and optimal tail buffer doping to improve EMI performance. The high-speed IGBT is ideal for high-frequency applications, including UPS systems, PV inverters, EV charging stations, welding machines, and household appliances.

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