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PTGH5065S1

絲?。?a target="_blank" title="Marking" href="/tgh5065s1/marking.html">TGH5065S1；Package：TO-247-3L；High speed 650V Field Stop Trench IGBT co-packed with fast and soft recovery anti-parallel diode

Features ?SuperiorhighspeedswitchingIGBT ?Lowsaturationvoltage1.65VatTVJ25oC ?Co-packedwithlowQrrandsoftrecoverydiode ?MaximumjunctiontemperatureTVJ175oC ?EasyparallelingusageduetopositivecoefficientVCEsat ?LeadfreeincompliancewithEURoHS2.0 ?Green

PTGH5065S1

High Speed IGBTs(20-40 KHz , 650V); ? Superior high speed switching IGBT\n? Low saturation voltage 1.65V at TVJ 25°C\n? Co-packed with low Qrr and soft recovery diode\n? Maximum junction temperature TVJ 175°C\n? Easy paralleling usage due to positive coefficient VCEsat\n? Lead free in compliance with EU RoHS 2.0\n? Green molding compound as per IEC 61249 standard;

PTGH5065S1 is engineered using field-stop trench technology, featuring a high-density trench cell design. This design assembled in TO-247-3L package ensures Low VCEsat with low conduction losses, outstanding switching capabilities, and optimal tail buffer doping to improve EMI performance. The high-speed IGBT is ideal for high-frequency applications, including UPS systems, PV inverters, EV charging stations, welding machines, and household appliances.