首頁>PTAB182002FCV1>規(guī)格書詳情
PTAB182002FCV1數(shù)據(jù)手冊Infineon中文資料規(guī)格書
PTAB182002FCV1規(guī)格書詳情
描述 Description
High Power RF LDMOS FET, 190 W, 28 V, 1805 – 1880 MHz
特性 Features
·Asymmetric Doherty Design - Main: P1dB = 70 W Typ - Peak: P1dB = 120 W Typ
·Broadband input and output matching
·Typical two-carrier WCDMA performance at 1842 MHz, 28 V (Doherty Configuration) - Average output power = 44.6 dBm - Linear Gain = 15.5 dB - Efficiency = 46% - IMD = -25 dBc
·Increased negative gate-source voltage range for improved performance in Doherty amplifiers
·Capable of handling 3:1 VSWR @ 30 V, 50 W avg output power. Single-carrier WCDMA (10 dB PAR), Doherty test fixture.
·Integrated ESD protection
·Pb-free and RoHS compliant
·Package: H-37248-4, earless
技術(shù)參數(shù)
- 制造商編號
:PTAB182002FCV1
- 生產(chǎn)廠家
:Infineon
- Matching?
:I/O
- Frequency Band?min?max
:1805.0MHz?1880.0MHz
- P1dB?
:190.0W?
- Supply Voltage?
:28.0V?
- Pout?
:29.0W?
- Gain?
:15.5dB?
- Test Signal?
:WCDMA
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
INFINEON/英飛凌 |
2223+ |
26800 |
只做原裝正品假一賠十為客戶做到零風險 |
詢價 | |||
INFINEON/英飛凌 |
2023+ |
SMD |
6895 |
原廠全新正品旗艦店優(yōu)勢現(xiàn)貨 |
詢價 | ||
Infineon Technologies |
22+ |
H372484 |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | ||
Cree/Wolfspeed |
2022+ |
H-37248-4 |
38550 |
全新原裝 支持表配單 中國著名電子元器件獨立分銷 |
詢價 | ||
INFINEON |
23+ |
NA |
8000 |
只做原裝現(xiàn)貨 |
詢價 | ||
INFINEON |
23+ |
NA |
7000 |
詢價 | |||
Infineon Technologies |
21+ |
H-49248H-4 |
20000 |
100%進口原裝!長期供應!絕對優(yōu)勢價格(誠信經(jīng)營)! |
詢價 | ||
Infineon Technologies |
24+ |
原裝 |
5000 |
原裝正品,提供BOM配單服務 |
詢價 | ||
Infineon |
1931+ |
N/A |
493 |
加我qq或微信,了解更多詳細信息,體驗一站式購物 |
詢價 | ||
Infineon |
22+ |
NA |
493 |
加我QQ或微信咨詢更多詳細信息, |
詢價 |