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PSMN1R9-80SSE

絲?。?a target="_blank" title="Marking" href="/x1e9s80s/marking.html">X1E9S80S;Package:SOT1235;N-channel 80 V, 1.9 mOhm MOSFET with enhanced SOA in LFPAK88

description N-channelenhancementmodeMOSFETinaLFPAK88packagequalifiedto175°C.Part ofNexperia'sApplicationSpecificMOSFETs(ASFETs)forHotswapandSoftStart.The PSMN1R9-80SSEdeliversverylowRDSonandenhancedsafeoperatingareaperformanceina high-reliabilitycopper-clip

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PSMN1R9-80SSE

N-channel 80 V, 1.9 mOhm MOSFET with enhanced SOA in LFPAK88; ? Fully optimized Safe Operating Area (SOA) for superior linear mode operation\n? Low RDSon for low I2R conduction losses\n? LFPAK88 package for applications that demand the highest performance and reliability\n;

N-channel enhancement mode MOSFET in a LFPAK88 package qualified to 175 °C. Part of Nexperia's \"ASFETs for hotswap\" portfolio, the PSMN1R9-80SSE delivers very low RDSon and a very strong linear-mode (SOA) performance in a high-reliability copper-clip LFPAK88 package.\n PSMN1R9-80SSE complements the latest \"hot-swap\" controllers – robust enough to withstand substantial inrush currents during turn-on, low RDSon to minimize I2R losses and deliver optimum efficiency when turned fully ON.\n

NexperiaNexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PSMN1R9-80SSJ

N-channel80V,1.9mOhmASFETwithenhanceddynamiccurrentsharinginLFPAK88

1.Generaldescription Inhigh-powerapplications,itiscommonpracticetoconnecttwoormoreMOSFETsinparallelto providehighcurrentcapability.Evenwhenthegatesaredrivenfromthesamegatedriver,itcanbe challengingtoensurethatMOSFETssharetheloadcurrentequally. Smalld

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PSMN2R0-30YL

NXP
SOT

恩XP

PSMN7R6-100BSEJ

Nexperia
TO-263

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

相關(guān)企業(yè):深圳市銘爾達科技有限公司

技術(shù)參數(shù)

  • Package name:

    LFPAK88

  • Product status:

    Production

  • Channel type:

    N

  • Nr of transistors:

    1

  • VDS [max] (V):

    80

  • RDSon [max] @ VGS = 10 V (mΩ):

    1.9

  • Tj [max] (°C):

    175

  • ID [max] (A):

    286

  • QGD [typ] (nC):

    23

  • QG(tot) [typ] @ VGS = 10 V (nC):

    155

  • Ptot [max] (W):

    340

  • Qr [typ] (nC):

    59.999996

  • VGSth [typ] (V):

    2.6

  • Automotive qualified:

    N

  • Ciss [typ] (pF):

    12235

  • Coss [typ] (pF):

    2843

  • Release date:

    2021-11-01

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更多PSMN1R9-80SSE供應(yīng)商 更新時間2025-7-30 9:04:00