描述 Description

Dual, standard level N-channel MOSFET in an LFPAK56D package (half-bridge configuration), using NextpowerS3 technology.
An internal connection is made between the source (S1) of the high-side FET to the drain (D2) of the low-side FET, making the device ideal to use as a half-bridge switch in high-performance PWM and space constrained motor drive applications

特性 Features

? LFPAK56D package with half-bridge configuration enables:
? Reduced PCB layout complexity
? Module shrinkage through reduced component count
? Improved system level Rth(j-amb) due to optimized package design
? Lower parasitic inductance to support higher efficiency
? Footprint compatibility with LFPAK56D Dual package

? NextpowerS3 technology
? Low power losses, high power density
? Superior avalanche performance
? Repetitive avalanche rated
? LFPAK copper clip packaging provides high robustness and reliability
? Gull wing leads support high manufacturability and Automated Optical Inspection (AOI)

應用 Application

? Handheld power tools, portable appliance and space constrained applications
? Brushless or brushed DC motor drive
? DC-to-DC systems
? LED lighting