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SI2302DS

N-ChannelEnhancementMOSFET

■Features ●VDS=20V ●RDS(on)=85mΩ@VGS=4.5V,ID=3.6A ●RDS(on)=115mΩ@VGS=2.5V,ID=3.1A

SI2302DS

N-channelenhancementmodefield-effecttransistor

1.Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusing TrenchMOS?1technology. Productavailability: SI2302DSinSOT23. 2.Features nTrenchMOS?technology nVeryfastswitching nLogiclevelcompatible nSubminiaturesurfacemountpackage. 3.Applic

SI2302DS-HF

N-ChannelMOSFET

■Features ●VDS=20V ●RDS(on)=85mΩ@VGS=4.5V,ID=3.6A ●RDS(on)=115mΩ@VGS=2.5V,ID=3.1A ●Pb?FreePackageMaybeAvailable.TheG?SuffixDenotesa Pb?FreeLeadFinish

SI2302-TP

N-ChannelEnhancementModeFieldEffectTransistor

Features ?Halogenfreeavailableuponrequestbyaddingsuffix-HF ?20V,3.0A,RDS(ON)=55mΩ@VGS=4.5V RDS(ON)=82mΩ@VGS=2.5V ?HighdensecelldesignforextremelylowRDS(ON) ?Ruggedandreliable ?Leadfreeproductisacquired ?SOT-23Package ?MarkingCode:S2 ?Epo

SK2302AAT

SOT-523Plastic-EncapsulateMOSFETS

SK2302AAVP

N-ChannelEnhancementModeFieldEffectTransistor

SK2302AAW

SOT-323Plastic-EncapsulateMOSFETS

SK2302AVP

N-ChannelEnhancementModeFieldEffectTransistor

SK2302AW

SOT-323Plastic-EncapsulateMOSFETS

SLS2302

N-ChannelEnhancementmodeFieldEffectTransistor