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首頁(yè)>PM39LV512-70VCE>規(guī)格書(shū)詳情

PM39LV512-70VCE中文資料PMC數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

PM39LV512-70VCE
廠(chǎng)商型號(hào)

PM39LV512-70VCE

功能描述

512 Kbit / 1Mbit / 2Mbit / 4Mbit 3.0 Volt-only CMOS Flash Memory

文件大小

87.15 Kbytes

頁(yè)面數(shù)量

20 頁(yè)

生產(chǎn)廠(chǎng)商

PMC

網(wǎng)址

網(wǎng)址

數(shù)據(jù)手冊(cè)

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更新時(shí)間

2025-8-9 12:00:00

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PM39LV512-70VCE規(guī)格書(shū)詳情

GENERAL DESCRIPTION

The Pm39LV512/010/020/040 are 512 Kbit/1 Mbit/2 Mbit/4 Mbit 3.0 Volt-only Flash Memories. These devices are designed to use a single low voltage, range from 2.7 Volt to 3.6 Volt, power supply to perform read, erase and program operations. The 12.0 Volt VPP power supply for program and erase operations are not required. The devices can be programmed in standard EPROM programmers as well.

The memory array of Pm39LV512 is divided into uniform 4 Kbyte sectors for data or code storage. The memory arrays of Pm39LV010/020/040 are divided into uniform 4 Kbyte sectors or uniform 64 Kbyte blocks (sector group - consists of sixteen adjacent sectors). The sector or block erase feature allows users to flexibly erase a memory area as small as 4 Kbyte or as large as 64 Kbyte by one single erase operation without affecting the data in others. The chip erase feature allows the whole memory array to be erased in one single erase operation. The devices can be programmed on a byte-by-byte basis after performing the erase operation.

FEATURES

? Single Power Supply Operation

- Low voltage range: 2.7 V - 3.6 V

? Memory Organization

- Pm39LV512: 64K x 8 (512 Kbit)

- Pm39LV010: 128K x 8 (1 Mbit)

- Pm39LV020: 256K x 8 (2 Mbit)

- Pm39LV040: 512K x 8 (4 Mbit)

? High Performance Read

- 55/70 ns access time

? Cost Effective Sector/Block Architecture

- Uniform 4 Kbyte sectors

- Uniform 64 Kbyte blocks (sector group - except Pm39LV512)

? Data# Polling and Toggle Bit Features

? Hardware Data Protection

? Automatic Erase and Byte Program

- Build-in automatic program verification

- Typical 16 μs/byte programming time

- Typical 55 ms sector/block/chip erase time

? Low Power Consumption

- Typical 4 mA active read current

- Typical 8 mA program/erase current

- Typical 0.1 μA CMOS standby current

? High Product Endurance

- Guarantee 100,000 program/erase cycles per single sector (preliminary)

- Minimum 20 years data retention

? Industrial Standard Pin-out and Packaging

- 32-pin (8 mm x 14 mm) VSOP

- 32-pin PLCC

- Optional lead-free (Pb-free) package

產(chǎn)品屬性

  • 型號(hào):

    PM39LV512-70VCE

  • 制造商:

    PMC

  • 制造商全稱(chēng):

    PMC

  • 功能描述:

    512 Kbit/1Mbit/2Mbit/4Mbit 3.0 Volt-only CMOS Flash Memory

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
PMC
24+
VSOP
5000
全新原裝正品,現(xiàn)貨銷(xiāo)售
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PMC
25+
TSOP
54648
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詢(xún)價(jià)
PMC
24+
VSOP
12000
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PMC
23+
TSSOP
19954
全新原裝正品現(xiàn)貨,支持訂貨
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20+
TSOP-32
31930
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票
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PMC
24+
TSOP32
3784
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PMC
24+
TSOP
9600
原裝現(xiàn)貨,優(yōu)勢(shì)供應(yīng),支持實(shí)單!
詢(xún)價(jià)
PMC
23+
TSOP-32
8215
原廠(chǎng)原裝
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PMC原裝
21+
TSOP-32
12588
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PMC
09+
TSOP-32
294
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