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UM2106

PINDIODE

DESCRIPTION UM2100SeriesPINdiodesaredesignedfortransmit/receiveswitchandattenuatorapplicationsinHFband(2-30MHz)andbelow.Asseriesconfiguredswitches,theselonglifetime(25μstypical)diodescancontrolupto2.5kW,CWina50ohmsystem.InHFband,insertionlossisless

MicrosemiMicrosemi Corporation

美高森美美高森美公司

UM2106B

ProductChangeNotification

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

UM2106D

ProductChangeNotification

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

UPG2106

L-BANDPADRIVERAMPLIFIER

DESCRIPTION TheμPG2106TBandμPG2110TBareGaAsMMICforPAdriveramplifierwithvariablegainfunctionwhichweredevelopedforPDC(PersonalDigitalCellularinJapan)andanotherL-bandapplication.Thedevicecanoperatewith3.0V,havingthehighgainandlowdistortion.TheμPG2106TBis

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPG2106TB

L-BANDPADRIVERAMPLIFIER

DESCRIPTION NECsUPG2106TBisaGaAsMMICforPAdriveramplifierswithvariablegainfunctionswhichwasdevelopedforL-bandapplications.Thedevicecanoperatewith3.0V,havinghighgainandlowdistortion. FEATURES ?LOWVOLTAGEOPERATION:VDD1=VDD2=3.0V,fRF=889to960MHz@

CEL

California Eastern Labs

UPG2106TB

L-BANDPADRIVERAMPLIFIER

DESCRIPTION TheμPG2106TBandμPG2110TBareGaAsMMICforPAdriveramplifierwithvariablegainfunctionwhichweredevelopedforPDC(PersonalDigitalCellularinJapan)andanotherL-bandapplication.Thedevicecanoperatewith3.0V,havingthehighgainandlowdistortion.TheμPG2106TBis

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPG2106TB

GaAsINTEGRATEDCIRCUITS

FEATURES ?Operationfrequency:mPG2106TB:fopt=889to960MHz :mPG2110TB:fopt=1429to1453MHz ?Supplyvoltage:mPG2106TB,mPG2110TB:VDD1,2=2.7to3.3V(3.0VTYP.) ?Circuitcurrent:mPG2106TB,mPG2110TB:IDD=25mATYP.@VDD1,2=3.0V,VAGC=2.5V,Pout=+8dBm ?

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

VN2106

N-ChannelEnhancement-ModeVerticalDMOSFETs

AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan

SUTEX

Supertex, Inc

VN2106N

N-ChannelEnhancement-ModeVerticalDMOSFETs

AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan

SUTEX

Supertex, Inc

VP2106

P-ChannelEnhancement-ModeVerticalDMOSFET

GeneralDescription TheSupertexVP2106isanenhancement-mode(normally-off)transistorthatutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistors,andtheh

SUTEX

Supertex, Inc

技術(shù)參數(shù)

  • 拓撲結(jié)構(gòu)：

    非隔離降壓型BUCK

  • 調(diào)光方式：

    PWM

  • PF值：

    0.5/0.9

  • BVDSS（V）：

    N/A

  • RDSON（OHM）：

    N/A

  • 最大輸出電流：

    N/A

  • 推薦輸出功率：

    200W@220V/100W@110V

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PacificMo
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1636+
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22+
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ADI/亞德諾
2511
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66900
電子元器件采購降本 30%!盈慧通原廠直采,砍掉中間差價
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PMI
23+
DIP-8
20
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Bourns Inc.
25+
非標準
9350
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
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BOURNS
20+
電感器
962
就找我吧!--邀您體驗愉快問購元件!
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Bourns
22+
NA
47
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更多PM2106供應(yīng)商 更新時間2025-7-29 9:26:00

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