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PHPT60606PY-Q

絲印：0606PAB；Package：SOT669；60 V, 6 A PNP high power bipolar transistor

1.Generaldescription PNPhighpowerbipolartransistorinaSOT669(LFPAK56)Surface-MountedDevice(SMD)power plasticpackage. NPNcomplement:PHPT60606NY-Q 2.Featuresandbenefits ?Highthermalpowerdissipationcapability ?Suitableforhightemperatureapplicationsupto175°C ?

PHPT60606PY-Q

60 V, 6 A PNP high power bipolar transistor;

PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.\n NPN complement: PHPT60606NY-Q\n

PHPT60606NY

60V,6ANPNhighpowerbipolartransistor

1.Generaldescription NPNhighpowerbipolartransistorinaSOT669(LFPAK56)Surface-MountedDevice (SMD)powerplasticpackage. PNPcomplement:PHPT60606PY 2.Featuresandbenefits ?Highthermalpowerdissipationcapability ?Hightemperatureapplicationsupto175°C ?ReducedPrinted

PHPT60606NY-Q

60V,6ANPNhighpowerbipolartransistor

1.Generaldescription NPNhighpowerbipolartransistorinaSOT669(LFPAK56)Surface-MountedDevice(SMD)power plasticpackage. PNPcomplement:PHPT60606PY-Q 2.Featuresandbenefits ?Highthermalpowerdissipationcapability ?Hightemperatureapplicationsupto175°C ?ReducedPrin

PHPT60606PY

60V,6APNPhighpowerbipolartransistor

1.Generaldescription PNPhighpowerbipolartransistorinaSOT669(LFPAK56)Surface-MountedDevice (SMD)powerplasticpackage. NPNcomplement:PHPT60606NY. 2.Featuresandbenefits ?Highthermalpowerdissipationcapability ?Suitableforhightemperatureapplicationsupto175°C ?Re