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PHP6NA60E

PowerMOS transistors Low capacitance Avalanche energy rated

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PHX6NA60E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3.9A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.2Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

PHX6NA60E

PowerMOStransistorsLowcapacitanceAvalancheenergyrated

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

STB6NA60

N-CHANNELENHANCEMENTMODEFASTPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODEFASTPOWERMOSTRANSISTOR ■TYPICALRDS(on)=1? ■±30VGATETOSOURCEVOLTAGERATING ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100oC ■LOWINTRINSICCAPACITANCES ■GATECHARGEMINIMIZED ■REDUCEDTHRESHOLDVOLTAGESPREAD ■THROUGH-HOLEI2PAK(TO-

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP6NA60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=6.5A@TC=25℃ ·DrainSourceVoltage-VDSS=600(Min) ·StaticDrain-SourceOn-Resistance； -RDS(on)=1.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

STP6NA60

N-CHANNELENHANCEMENTMODEFASTPOWERMOSTRANSISTOR

DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptimizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRDS(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRDS(

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP6NA60FI

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=6.5A@TC=25℃ ·DrainSourceVoltage-VDSS=600(Min) ·StaticDrain-SourceOn-Resistance； -RDS(on)=1.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

STP6NA60FI

N-CHANNELENHANCEMENTMODEFASTPOWERMOSTRANSISTOR

DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptimizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRDS(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRDS(

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP6NA60FP

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3.9A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance； -RDS(on)=1.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

STP6NA60FP

N-CHANNELENHANCEMENTMODEFASTPOWERMOSTRANSISTOR

DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptmizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRDS(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRDS(o

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

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恩XP
23+
TO-220
11846
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價(jià)
NEC
23+
TO-263
69820
終端可以免費(fèi)供樣,支持BOM配單!
 詢價(jià)
PHI
22+
TO-220
6000
十年配單,只做原裝
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N
23+
TO220AB
6000
原裝正品，支持實(shí)單
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N
22+
TO220AB
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
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N
25+
TOTO-220AB
12300
獨(dú)立分銷商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
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恩XP
1822+
TO-220
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
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恩XP
18+
TO-220
41200
原裝正品,現(xiàn)貨特價(jià)
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MINI
24+
25
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MINI
24+
SMD
1680
MINI專營(yíng)品牌進(jìn)口原裝現(xiàn)貨假一賠十
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更多PHP6NA60E供應(yīng)商 更新時(shí)間2025-7-9 15:48:00

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